Film formation device and film formation method for forming metal film

US10047452B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10047452-B2
Application numberUS-201314371036-A
CountryUS
Kind codeB2
Filing dateFeb 21, 2013
Priority dateFeb 23, 2012
Publication dateAug 14, 2018
Grant dateAug 14, 2018

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  1. Title

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  5. First independent claim

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Abstract

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Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between. the positive electrode and a substrate to serve as the negative electrode, and a power supply unit E adapted to apply a voltage across the positive electrode 11 and the substrate B. A voltage is applied across the positive electrode 11 and the substrate B to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane 13, whereby a metal film F made of metal is formed, The positive electrode 11 is made of a porous body that allows a solution L containing metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane 13.

First claim

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The invention claimed is: 1. A film formation device for forming a metal film, comprising at least: a positive electrode; a solid electrolyte membrane formed on a surface of the positive electrode, the solid electrolyte membrane being disposed between the positive electrode and a substrate to serve as a negative electrode; and a power supply unit adapted to apply a voltage across the positive electrode and the substrate, wherein a voltage is applied across the positive electrode and the substrate to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane, so that a metal film made of the metal is formed, the positive electrode is made of a porous body that allows a solution containing the metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane, the film formation device further comprises a pressure unit adapted to move the positive electrode toward the substrate, thereby pressing the solid electrolyte membrane against the substrate on which a film is to be formed, the film formation device further comprises a conducting portion that is formed in a manner surrounding a film formation region of the substrate during formation of the film, the conducting portion being adapted to electrically connect a negative electrode of the power supply unit and the substrate, the solid electrolyte membrane has a shape that conforms to a shape of the film formation region of the substrate, an insulator is further disposed on the positive electrode in a manner surrounding the solid electrolyte membrane, and the conducting portion includes a plurality of conducting protrusions that are disposed on the insulator in a manner protruding toward the substrate from a surface of the insulator. 2. The film formation device for forming a metal film according to claim 1 , wherein the conducting protrusions have a structure in which, when the conducting protrusions are made into contact with the substrate upon application of pressure by the pressure unit, the conducting protrusions are pressed into the insulator due to the pressure applied. 3. A film formation device for forming a metal film, comprising at least: a positive electrode; a solid electrolyte membrane formed on a surface of the positive electrode, the solid electrolyte membrane being disposed between the positive electrode and a substrate to serve as a negative electrode; and a power supply unit adapted to apply a voltage across the positive electrode and the substrate, wherein a voltage is applied across the positive electrode and the substrate to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane, so that a metal film made of the metal is formed, the positive electrode is made of a porous body that allows a solution containing the metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane, a surface of the positive electrode that is in contact with the solid electrolyte membrane has a film formation surface with a shape that conforms to a shape of a film formation region of the substrate, and a non-film formation surface other than the film formation surface, and metal of the film formation surface is metal with a lower oxygen overvoltage than that of metal of the non-film formation surface. 4. A film formation device for forming a metal film, comprising at least: a positive electrode; a solid electrolyte membrane formed on a surface of the positive electrode, the solid electrolyte membrane being disposed between the positive electrode and a substrate to serve as a negative electrode; and a power supply unit adapted to apply a voltage across the positive electrode and the substrate, wherein a voltage is applied across the positive electrode and the substrate to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane, so that a metal film made of the metal is formed, the positive electrode is made of a porous body that allows a solution containing the metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane, and the solid electrolyte membrane contains hydrogen ions. 5. The film formation device for forming a metal film according to claim 1 , further comprising a metal ion supply unit for supplying a solution containing the metal ions to the positive electrode. 6. The film formation device for forming a metal film according to claim 3 , further comprising a metal ion supply unit for supplying a solution containing the metal ions to the positive electrode. 7. The film formation device for forming a metal film according to claim 4 , further comprising a metal ion supply unit for supplying a solution containing the metal ions to the positive electrode. 8. The film formation device for forming a metal film according to claim 3 , further comprising a pressure unit adapted to move the positive electrode toward the substrate, thereby pressing the solid electrolyte membrane against the substrate on which a film is to be formed. 9. The film formation device for forming a metal film according to claim 4 , further comprising a pressure unit adapted to move the positive electrode toward the substrate, thereby pressing the solid electrolyte membrane against the substrate on which a film is to be formed.

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What does patent US10047452B2 cover?
Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between. t…
Who is the assignee on this patent?
Hiraoka Motoki, Yanagimoto Hiroshi, Sato Yuki, and 2 more
What technology area does this patent fall under?
Primary CPC classification C25D17/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 14 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).