Plasma processing devices having multi-port valve assemblies

US10037869B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10037869-B2
Application numberUS-201514880088-A
CountryUS
Kind codeB2
Filing dateOct 9, 2015
Priority dateAug 13, 2013
Publication dateJul 31, 2018
Grant dateJul 31, 2018

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

First claim

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The invention claimed is: 1. A method for controlling a multi-port valve assembly, comprising: monitoring a condition associated with a plasma processing chamber, the condition being processed by a controller, the multi-port valve assembly is positioned below a chuck of the plasma processing chamber and is configured to control flow conductance, wherein the multi-port valve assembly has multiple openings formed within a bottom plate of the multi-port valve assembly, wherein each of the multiple openings is in contact with a corresponding one of a plurality of vacuum pumps located outside the plasma processing chamber, wherein the multi-port valve assembly has a rigid movable seal plate with multiple lobes that are rotatably moveable for placement in one of an overlapping state, degrees of partially overlapping states, and a non-overlapping state with respect to the openings, and the rigid movable seal plate is vertically moveable to define one of a sealed state and degrees of unsealed states with respect to the openings; and instructing by the controller an actuator associated with the multi-port valve assembly to adjust a position of the rigid movable seal plate to cause an adjustment of the flow conductance, wherein the adjustment of the position of the rigid movable seal plate causes simultaneous movement of the lobes of the rigid movable seal plate with respect to the openings to facilitate a simultaneous change in the flow conductance associated with the openings. 2. The method of claim 1 , wherein the simultaneous movement changes an equal angle formed between each of the lobes and a center of a corresponding one of the openings, wherein the simultaneous movement provides for an equal height formed between each of the lobes and the bottom plate. 3. The method of 1 , wherein the condition is processed by comparing the condition against an operating recipe being performed by a process module, wherein the operating recipe is being performed to process a wafer, wherein said instructing is performed in response to the comparison of the condition against the operating recipe. 4. The method of claim 1 , wherein the condition is processed by comparing the condition against an operating recipe being performed by a process module, wherein said instructing is performed in response to determining based on the comparison that the condition does not match a pre-defined condition with the operating recipe. 5. The method of claim 1 , wherein the position of the rigid moveable seal plate is adjusted to rotatably move the lobes with respect to the openings and to vertically translate the lobes with respect to the openings. 6. The method of claim 1 , wherein the multi-port valve assembly is attached to a vacuum connection wall of the plasma processing chamber, the vacuum connection wall being a bottom wall of the plasma processing chamber, the plasma processing chamber further including a top wall and a plurality of side walls. 7. The method of claim 1 , wherein the bottom plate is located below the moveable seal plate, wherein the flow conductance is associated with all the openings. 8. The method of claim 1 , wherein the lobes are rotatable with respect to a vertical axis passing through a center of mass of the bottom plate. 9. The method of claim 1 , wherein in the overlapping state, there is a lack of the flow conductance from the plasma processing chamber to the vacuum pumps, wherein with an increase in the degrees of the partially overlapping states, there is an increase in the flow conductance from the plasma processing chamber to the vacuum pumps, wherein in the non-overlapping state, there is a maximum amount of the flow conductance from the plasma processing chamber to the vacuum pumps compared to an amount of the flow conductance in the overlapping state and an amount of the flow conductance in the partially overlapping states. 10. The method of claim 1 , wherein during the sealed state, there is a lack of the flow conductance from the plasma processing chamber to the vacuum pumps, wherein during the unsealed state, there is a higher amount of the flow conductance from the plasma processing chamber to the vacuum pumps compared to that in the sealed state. 11. The method of claim 1 , wherein the rigid moveable seal plate includes a magnet, wherein the actuator includes a current generator and a coil embedded within the bottom plate, wherein a current flowing through the coil creates a magnetic field and the magnet creates a magnetic field for rotating the rigid moveable seal plate. 12. The method of claim 1 , wherein the rigid moveable seal plate includes a magnet, wherein the actuator includes a current generator and a coil embedded within the bottom plate, wherein a current flowing through the coil creates a magnetic field and the magnet creates a magnetic field for moving the rigid moveable seal plate vertically. 13. The method of claim 1 , further comprising: determining, by the controller, whether a low level of change in the flow conductance is to be achieved from an interior region of the plasma processing chamber to the vacuum pumps; wherein instructing the actuator includes controlling the actuator so that the rigid moveable seal plate moves in a vertical direction to seal or unseal the multiple openings between the vacuum pumps and the plasma processing chamber upon determining that the low level of change in the flow conductance is to be achieved, and wherein instructing the actuator includes controlling the actuator so that the rigid moveable seal plate moves in a transverse direction to open, or partially open, or close the multiple openings in response to determining that a high level of change in the flow conductance is to be achieved. 14. The method of claim 1 , wherein the condition includes pressure within the plasma processing chamber, the method further comprising: determining, by the controller, whether a level of the pressure is within a predetermined normal operating range; wherein instructing the actuator includes controlling the actuator so that the openings between the plasma processing chamber and the vacuum pumps are closed in response to determining that the level is not within the predetermined normal operating range. 15. The method of claim 14 , wherein determining, by the controller, whether the level of the pressure is within the predetermined normal operating range includes determining whether the level is above the pre-determined normal operating range of pressure levels. 16. A method for controlling a multi-port valve assembly, comprising: operating, by a controller, the multi-port valve assembly according to a recipe, wherein the controller is coupled to a plasma processing chamber, the multi-port valve assembly is positioned below a chuck of the plasma processing chamber and is configured to control flow conductance, wherein the multi-port valve assembly has multiple openings formed within a bottom plate of the multi-port valve assembly, wherein each of the multiple openings is in contact with a corresponding one of a plurality of vacuum pumps located outside the plasma processing chamber, wherein the multi-port valve assembly has a rigid movable seal plate with multiple lobes that are rotatably moveable for placement in one of an overlapping state, degrees of partially overlapping states, and a non-overlapping state with respect to the openings, and the rigid movable seal plate is vertically moveable to define one of a sealed state and degrees of unsealed states with respect to the openings; and instructing by the controller an actuator associated with the

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What does patent US10037869B2 cover?
A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port seal…
Who is the assignee on this patent?
Lam Res Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/32449. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 31 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).