Method of manufacturing power-module substrate with heat-sink

Patent metadata

Field	Value
Publication number	US-10032648-B2
Application number	US-201415028173-A
Country	US
Kind code	B2
Filing date	Oct 8, 2014
Priority date	Oct 10, 2013
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A maximum length of a heat sink is set as “L” and a warp amount of the heat sink is set as “Z”; the warp amount “Z” is set as a positive value if a bonded surface of the heat sink to a metal layer is deformed to be concave or the warp amount “Z” is set as a negative value if the bonded surface is deformed to be convex; a ratio Z/L of the maximum length “L” and the warp amount “Z” measured at 25° C. is in a range not smaller than −0.005 and not larger than 0.005, and the ratio Z/L is in the range not smaller than −0.005 and not larger than 0.005 even when it is heated to 280° C. and then cooled to 25° C.

First claim

The invention claimed is:

1. A manufacturing method of a power-module substrate with heat sink,
wherein the power-module substrate including a ceramic substrate, a circuit layer provided on one surface of the ceramic substrate, and a metal layer made of aluminum of purity not lower than 99% provided on another surface of the ceramic substrate; and
a heat sink made of material having linear-expansion coefficient of not smaller than 7×10 −6 /K and not larger than 12×10 −6 /K and bonded on the metal layer of the power-module substrate, wherein
a maximum length of the heat sink is set as “L” and a warp amount of the heat sink is set as “Z”;
the warp amount “Z” is set as a positive value if a bonded surface of the heat sink on the metal layer is deformed to be concave; or is set as a negative value if the bonded surface is deformed to be convex;
a ratio Z/L of the maximum length “L” and the warp amount “Z” measured at 25° C. is in a range not smaller than −0.002 and not larger than 0.002, and
the ratio Z/L is in the range not smaller than −0.002 and not larger than 0.002 even when it is heated to 280° C. and then cooled to 25° C.;
the method comprising:
laminating the power-module substrate and the heat sink;
placing the power module substrate with heat sink between a first pressing plate and a second pressing plate; each pressing plate having a curved fixture radius of at least 1000 mm and no greater than 6000 mm;
brazing the power module substrate by heating in a vacuum atmosphere at a temperature of 550° C. to 650° C. in which the bonded surface of the heat sink is deformed by a load of 0.3 MPa to 10 MPa by the first pressing plate and second pressing plate to concavely warp; and
cooling in a deformed state to substantially 25° C. so as to bond power-module substrate and the heat sink.

2. A manufacturing method according to claim 1 , wherein the heat sink is made from AlSiC matrix composite material, A1 graphite composite material, Cu—W alloy, or Cu—Mo alloy.

3. A manufacturing method according to claim 1 , wherein a difference ΔZ/L between a maximum value and a minimum value of the ratio Z/L when the temperature is varied from 25° C. to 280° C. is not larger than 0.002.

Assignees

• Mitsubishi Materials Corp

Inventors

• Oohiraki Tomoya
• Oi Sotaro

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• H10W72/071

  Connecting or disconnecting · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title