Semiconductor device, driver IC, computer and electronic device

US10032492B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10032492-B2
Application numberUS-201715455226-A
CountryUS
Kind codeB2
Filing dateMar 10, 2017
Priority dateMar 18, 2016
Publication dateJul 24, 2018
Grant dateJul 24, 2018

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor device that is novel, is capable of high-speed operation, consumes low power, or occupies a small area is provided. The semiconductor device includes a memory portion, a control circuit, and a plurality of wirings. The memory portion includes a plurality of memory circuits. The memory circuit includes a memory cell. The memory cell is electrically connected to a wiring. A first signal that indicates the amount of data that are written to or read from the memory portion is supplied to the control circuit. The control circuit has the function of controlling the number of the wirings to which a second signal for selecting the memory cell is simultaneously supplied on the basis of the first signal.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device comprising: a memory portion; and a control circuit, wherein the memory portion comprises a plurality of memory circuits, wherein each of the plurality of memory circuits comprises a memory cell and a wiring, wherein the memory cell is electrically connected to the wiring, wherein the control circuit is supplied with a first signal that indicates the amount of data to be written to the memory portion or the amount of data to be read from the memory portion, and wherein the control circuit is configured to control the number of the plurality of memory circuits to which a second signal for selecting the memory cell is simultaneously supplied on the basis of the first signal. 2. The semiconductor device according to claim 1 , wherein the control circuit is supplied with an address signal, and wherein the second signal is generated on the basis of the first signal and the address signal. 3. A driver IC comprising: a frame memory comprising the semiconductor device according to claim 1 ; a controller; and a source driver. 4. A computer comprising: the semiconductor device according to claim 1 ; an input device; an output device; and a CPU. 5. An electronic device comprising: the semiconductor device according to claim 1 ; and at least one of a display portion, a microphone, a speaker, and a control key. 6. A semiconductor device comprising: a memory portion; and a control circuit, wherein the memory portion comprises a plurality of memory circuits, wherein each of the plurality of memory circuits comprises a memory cell, a first wiring, a second wiring and an amplifier circuit, wherein the memory cell is electrically connected to the first wiring and the second wiring, wherein the amplifier circuit is electrically connected to the second wiring, wherein the control circuit is supplied with a first signal that indicates the amount of data to be written to the memory portion or the amount of data to be read from the memory portion, wherein the control circuit is configured to control the number of the plurality of memory circuits to which a second signal for selecting the memory cell is simultaneously supplied on the basis of the first signal, and wherein the control circuit is configured to control the number of the plurality of memory circuits to which a third signal for operating the amplifier circuit is simultaneously supplied on the basis of the first signal. 7. The semiconductor device according to claim 6 , wherein the amplifier circuit is configured to temporarily retain data that have been read from the memory cell. 8. The semiconductor device according to claim 6 , wherein the memory cell comprises a transistor, wherein the transistor comprises an oxide semiconductor in a channel formation region, and wherein the memory cell is stacked over the amplifier circuit. 9. The semiconductor device according to claim 6 , wherein the control circuit is supplied with an address signal, and wherein the second signal is generated on the basis of the first signal and the address signal. 10. A driver IC comprising: a frame memory comprising the semiconductor device according to claim 6 ; a controller; and a source driver. 11. A computer comprising: the semiconductor device according to claim 6 ; an input device; an output device; and a CPU. 12. An electronic device comprising: the semiconductor device according to claim 6 ; and at least one of a display portion, a microphone, a speaker, and a control key. 13. A semiconductor device comprising: a memory portion; and a control circuit, wherein the memory portion comprises a plurality of memory circuits, wherein each of the plurality of memory circuits comprises a memory cell, a first wiring, a second wiring and an amplifier circuit, wherein the memory cell is electrically connected to the first wiring and the second wiring, wherein the amplifier circuit is electrically connected to the second wiring, wherein the control circuit is supplied with a first signal that indicates the number of the plurality of memory circuits to be selected, wherein the control circuit is configured to control the number of the plurality of memory circuits to which a second signal for selecting the memory cell is simultaneously supplied on the basis of the first signal, and wherein the control circuit is configured to control the number of the plurality of memory circuits to which a third signal for operating the amplifier circuit is simultaneously supplied on the basis of the first signal. 14. The semiconductor device according to claim 13 , wherein the amplifier circuit is configured to temporarily retain data that have been read from the memory cell. 15. The semiconductor device according to claim 13 , wherein the memory cell comprises a transistor, wherein the transistor comprises an oxide semiconductor in a channel formation region, and wherein the memory cell is stacked over the amplifier circuit. 16. The semiconductor device according to claim 13 , wherein the control circuit is supplied with an address signal, and wherein the second signal is generated on the basis of the first signal and the address signal. 17. A driver IC comprising: a frame memory comprising the semiconductor device according to claim 13 ; a controller; and a source driver. 18. A computer comprising: the semiconductor device according to claim 13 ; an input device; an output device; and a CPU. 19. An electronic device comprising: the semiconductor device according to claim 13 ; and at least one of a display portion, a microphone, a speaker, and a control key.

Assignees

Inventors

Classifications

  • Bit-line organisation, e.g. bit-line layout, folded bit lines · CPC title

  • Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating · CPC title

  • Decoders · CPC title

  • Address decoders, e.g. bit - or word line decoders; Multiple line decoders · CPC title

  • G11C7/065Primary

    Differential amplifiers of latching type · CPC title

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Frequently asked questions

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What does patent US10032492B2 cover?
A semiconductor device that is novel, is capable of high-speed operation, consumes low power, or occupies a small area is provided. The semiconductor device includes a memory portion, a control circuit, and a plurality of wirings. The memory portion includes a plurality of memory circuits. The memory circuit includes a memory cell. The memory cell is electrically connected to a wiring. A first …
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification G11C7/065. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 24 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).