PECVD apparatus and process

Patent metadata

Field	Value
Publication number	US-10030306-B2
Application number	US-201314422148-A
Country	US
Kind code	B2
Filing date	Oct 23, 2013
Priority date	Oct 26, 2012
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

First claim

The invention claimed is:

1. An apparatus for processing a substrate, comprising:
a chamber comprising a side wall and a floor;
a lid comprising a first plate and coupled to the side wall of the chamber, wherein the side wall, the floor, and the lid define an internal volume of the chamber;
a gas distributor coupled to the first plate and having a plurality of gas flow openings formed therethrough;
a metrology device to project light through one of the gas flow openings and detect reflected light that is a reflected portion of the projected light, the metrology device comprising a collimator with a fiber optic light source, the collimator disposed through the first plate; and
a substrate support disposed in the internal volume of the chamber.

2. The apparatus of claim 1 , wherein the first plate comprises an opening through which the collimator is disposed, and the opening provides a gap that allows lateral motion of the collimator.

3. The apparatus of claim 2 , further comprising a seating plate between the first plate and the gas distributor, the seating plate comprising a recess aligned with the gas flow opening, wherein the collimator is seated in the recess.

4. The apparatus of claim 3 , further comprising an RF strap coupled to the collimator.

5. The apparatus of claim 3 , further comprising a plurality of fasteners that couple the collimator to the first plate, each fastener comprising a resilient member.

6. The apparatus of claim 1 , wherein the lid further comprises an electrode between the gas distributor and the side wall, the electrode coupled to a first tuning circuit.

7. The apparatus of claim 6 , wherein the lid further comprises a heater that heats the gas distributor.

8. The apparatus of claim 7 , wherein the substrate support comprises a plurality of zones and each zone has a heater.

9. The apparatus of claim 8 , wherein the substrate support further comprises an electrode coupled to a second tuning circuit.

10. An apparatus for processing a substrate, comprising:
a chamber comprising a side wall and a floor;
a lid comprising a first plate and coupled to the side wall of the chamber, wherein the side wall, the floor, and the lid define an internal volume of the chamber;
a gas distributor coupled to the first plate and having a plurality of gas flow openings formed therethrough;
a metrology device comprising a light source to project light through one of the gas flow openings and a light detector to receive reflected light that is a reflected portion of the projected light, the metrology device comprising a collimator with a fiber optic light source, the collimator disposed through the first plate; and
a substrate support disposed in the internal volume of the chamber, the substrate support having a plurality of thermal zones.

11. The apparatus of claim 10 , wherein the lid further comprises a second zoned plate between a seating plate and the gas distributor, the second zoned plate having a plurality of openings, wherein each opening of the second zoned plate is aligned with a gas flow opening of the gas distributor.

12. The apparatus of claim 11 , wherein an extension is seated in a recess formed in the seating plate, and the recess has a slanted wall.

13. The apparatus of claim 12 , wherein the lid further comprises an electrode disposed between the gas distributor and the side wall, the electrode coupled to a first tuning circuit with a first adjustable component.

14. The apparatus of claim 13 , wherein each thermal zone of the substrate support comprises a heater and a thermal sensor.

15. The apparatus of claim 14 , wherein the substrate support further comprises an electrode coupled to a second tuning circuit with a second adjustable component.

16. An apparatus for processing a substrate, comprising:
a chamber comprising a side wall and a floor;
a lid coupled to the side wall of the chamber, the side wall, the floor, and the lid defining an internal volume of the chamber;
a gas distributor having a plurality of gas flow openings formed therethrough;
a heater located at an edge portion of the gas distributor;
a light source to project light through one of the gas flow openings and a light detector to receive reflected light that is a reflected portion of the projected light;
a first electrode disposed between the lid and the side wall and coupled to a first tuning circuit that has an adjustable component; and
a substrate support disposed in the internal volume of the chamber, the substrate support comprising a plurality of zones, each zone having a heater and a temperature sensor, the substrate support also comprising a second electrode coupled to a second tuning circuit that has an adjustable component.

Assignees

• Applied Materials Inc

Inventors

• Rajagopalan Nagarajan
• Han Xinhai
• Tsiang Michael
• Ogata Masaki
• Jiang Zhijun
• Rocha-Alvarez Juan Carlos
• Nowak Thomas
• Zhou Jianhua
• Sankarakrishnan Ramprakash
• Balasubramanian Ganesh
• Bansal Amit Kumar
• Lee Jeongmin
• Egan Todd
• Budiarto Edward
• Panasyuk Dmitriy
• Lee Terrance Y
• Chen Jian J
• Ayoub Mohamad A
• Park Heung Lak
• Reilly Patrick
• Shaikh Shahid
• Kim Bok Hoen
• Starik Sergey

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• H10P72/76

  using mechanical means, e.g. clamps or pinches · CPC title

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title