Method of producing large-scale layers of solid material

Patent metadata

Field	Value
Publication number	US-10029277-B2
Application number	US-201415101783-A
Country	US
Kind code	B2
Filing date	Dec 4, 2014
Priority date	Dec 4, 2013
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

The invention relates to a method of producing at least one layer of solid material. This method comprises at the very least the steps of: providing a carrier substrate with a first exposed surface and with a second exposed surface; producing a detachment layer in the carrier substrate or over the first exposed surface of the carrier substrate, the detachment layer having an exposed surface; producing the first layer of solid material over the exposed surface of the detachment layer, the first layer of solid material having a free surface spaced apart from the detachment layer; positioning or forming a receiving layer on the second exposed surface of the carrier substrate or on the free surface of the first layer of solid material; generating stresses within the detachment layer, the stresses being generated by tempering at least the receiving layer, a crack propagating within the detachment layer or in the boundary region between the detachment layer and the first layer of solid material as a result of the stresses, the first layer of solid material being split off from the previously produced multi-layer arrangement by the crack.

First claim

The invention claimed is:

1. A method of producing at least one layer of solid material comprising:
providing a carrier substrate with a first exposed surface and with a second exposed surface, the carrier substrate comprising silicon, silicon carbide or sapphire;
producing an amorphous detachment layer in the carrier substrate by modifying the carrier substrate, the amorphous detachment layer comprising silicon, silicon carbide or sapphire;
producing a first layer of solid material over the exposed surface of the detachment layer, the first layer of solid material having a free surface spaced apart from the detachment layer, the first layer of solid material comprising silicon, silicon carbide or sapphire;
positioning or forming a receiving layer on the second exposed surface of the carrier substrate or on the free surface of the first layer of solid material; and
generating stresses within the detachment layer, the stresses being generated by tempering at least the receiving layer, a crack propagating within the detachment layer, the first layer of solid material being split off from the previously produced multi-layer arrangement by the crack.

Assignees

• Siltectra Gmbh
• Siltectra Gmbh

Inventors

• Lichtensteiger Lukas
• Richter Jan
• Drescher Wolfram

Classifications

• H10P90/1904

  Preparing vertically inhomogeneous wafers · CPC title

• H10P90/00 Primary

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title