Fabrication of nanoscale vacuum grid and electrode structure with high aspect ratio dielectric spacers between the grid and electrode

Patent metadata

Field	Value
Publication number	US-10026822-B2
Application number	US-201514939743-A
Country	US
Kind code	B2
Filing date	Nov 12, 2015
Priority date	Nov 14, 2014
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein.

First claim

What is claimed is:

1. A multi-layer electrode-grid structure comprising:
a substrate;
a layer of a first material on the substrate, the layer of the first material forming an electrode;
a layer of a second material on the first material, the second material including a dielectric; and
a patterned layer of a third material on the second material, wherein the patterned layer of the third material forms a grid, the layer of a second material having a pattern defined by a pattern of the grid;
wherein the layer of a second material has a width and a height, the layer of a second material having a ratio of the height to the width between 2/1 and 50/1.

2. The multi-layer electrode-grid structure of claim 1 further comprising:
an adhesion layer that is between the substrate and the layer of the first material.

3. The multi-layer electrode-grid structure of claim 2 wherein the adhesion layer includes at least one of titanium and copper.

4. The multi-layer electrode-grid structure of claim 2 wherein the adhesion layer has a thickness, and wherein the thickness is substantially between 10 nm and 30 nm.

5. The multi-layer electrode-grid structure of claim 2 wherein the adhesion layer includes a material that is selected to improve adhesion of the first material to the substrate.

6. The multi-layer electrode-grid structure of claim 2 wherein the adhesion layer comprises three conductive layers, the three layers including two outer layers and one inner layer, wherein the two outer layers are in adhesive contact with at least one of the substrate and the layer of the first material and the one inner layer, wherein each of the two outer layers has a smaller thickness than the one inner layer.

7. The multi-layer electrode-grid structure of claim claim 6 wherein the two outer layers comprises titanium and the one inner layer comprises copper.

8. The multi-layer electrode-grid structure of claim 1 wherein the substrate includes a degenerately n++ arsenic (As) doped silicon (Si) wafer.

9. The multi-layer electrode-grid structure of claim 1 wherein the first material includes lanthanum hexaboride (LaB6).

10. The multi-layer electrode-grid structure of claim 1 wherein the second material includes at least one of silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and hafnium oxide (HfO 2 ).

11. The multi-layer electrode-grid structure of claim 1 wherein the grid includes electrical contacts.

12. The multi-layer electrode-grid structure of claim 1 further comprising a grid coating on the grid, and wherein the third material comprises a metal and the grid coating includes a dielectric comprising an oxide of the metal.

13. The multi-layer electrode-grid structure of claim 1 wherein the third material includes Aluminum (Al).

14. The multi-layer electrode-grid structure of claim 1 wherein the etched second material has a width and a height, and wherein the ratio of the height to the width is between 2/1 and 5/1.

15. The multi-layer electrode-grid structure of claim 1 wherein the etched second material has a width and a height, and wherein the ratio of the height to the width is between 5/1 and 20/1.

16. The multi-layer electrode-grid structure of claim 1 wherein the etched second material has a width and a height, and wherein the ratio of the height to the width is between 20/1 and 50/1.

17. The multi-layer electrode-grid structure of claim 1 wherein the first material includes at least one of cerium hexaboride (CeB 6 ), tungsten (W), and diamond.

18. The multi-layer electrode-grid structure of claim 1 further comprising a grid coating on the grid, and wherein the grid coating is coated conformally on the grid.

19. The multi-layer electrode-grid structure of claim 1 further comprising a grid coating on the grid, and wherein the grid coating is applied to an upper portion of the grid.

20. The multi-layer electrode-grid structure of claim 1 , further comprising a self-supporting grid structure on the patterned layer of a third material.

21. The multi-layer electrode-grid structure of claim 20 , wherein the self-supporting grid structure comprises a different grid pattern than that of the patterned layer of a third material.

22. The multi-layer electrode-grid structure of claim 20 , wherein the self-supporting grid structure comprises a material selected from the group consisting of graphene, MoS 2 , WS 2 , and a carbon nanotube mesh.

Assignees

• Elwha Llc

Inventors

• Mankin Max N
• Pan Tony S

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/264

  by chemical means · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title