Apparatuses, systems, and methods for ion traps

Patent metadata

Field	Value
Publication number	US-9558908-B2
Application number	US-201514700312-A
Country	US
Kind code	B2
Filing date	Apr 30, 2015
Priority date	Apr 30, 2015
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

First claim

What is claimed:

1. An ion trap apparatus, comprising:
a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces;
two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails;
a number of through-silicon vias (TSVs) formed through a substrate of the ion trap; and
a trench capacitor formed in the substrate around at least one TSV.

2. The apparatus of claim 1 , wherein the two sequences of DC electrodes are configured to be biased with DC voltages that contribute to a combined electrical field and magnetic field to trap at least one ion in a potential well above an upper surface of at least one of the DC electrodes, the MW rails, and the RF rails.

3. The apparatus of claim 1 , wherein the number of RF rails are configured to conduct an oscillating current to contribute to a combined electrical field and magnetic field to trap at least one ion in a potential well above the DC electrodes, the MW rails and the RF rails.

4. The apparatus of claim 1 , wherein the number of MW rails are configured to conduct an oscillating current to contribute to transition between quantum states of at least one ion in a potential well above the MW rails or the RF rails.

5. The apparatus of claim 1 , wherein the number of TSVs formed through the substrate are configured to provide an electrical potential to DC electrodes in the two sequences of DC electrodes.

6. The apparatus of claim 1 , wherein the trench capacitor formed in the substrate is configured with a capacitance to reduce unintended variation of an electrical field to which an associated DC electrode contributes.

7. The apparatus of claim 1 , further comprising:
a number of ground rails formed between the two sequences of DC electrodes substantially parallel to the substantially parallel longitudinal axes of the two sequences of DC electrodes, the MW rails, and the RF rails;
wherein the number of ground rails are configured to provide a relatively stable location in a potential well for at least one ion above an upper surface of the DC electrodes, the MW rails, the RF rails, and the ground rails.

8. An ion trap system, comprising: a substrate material;
three sequential planar conductive materials formed above the substrate material, wherein:
a first planar conductive material forms a ground plane;
a second planar conductive material forms a signal routing plane; and
a third planar conductive material forms a ground connection plane;
a number of longitudinal gaps formed in the second planar conductive material to separate two longitudinal sequences of direct current (DC) electrodes from at least two separate longitudinal radio frequency (RF) rails positioned between the two sequences of DC electrodes;
a first number of through-silicon vias (TSVs) formed through the substrate material; a first number of trench capacitors formed in the substrate material around at least one of the first number of TSVs; and
at least two longitudinal microwave (MW) rails are positioned in the substrate below the first planar conductive material.

9. The system of claim 8 , wherein an electrical potential is provided to a number of DC electrodes in the two longitudinal sequences of DC electrodes by the DC electrodes being connected to the first number of TSVs by the second planar conductive material.

10. The system of claim 8 , wherein the two longitudinal sequences of DC electrodes are connected to the first number of TSVs on an opposite side of the substrate from a source of an electrical potential connected to the first number of TSVs.

11. The system of claim 8 , wherein a number of horizontal gaps are formed in the two longitudinal sequences of DC electrodes to form two longitudinal sequences of separate DC electrodes.

12. The system of claim 8 , further comprising:
a second number of TSVs formed through the substrate material and connected to the second planar conductive material; and
a second trench capacitor formed in the substrate material around at least one of the second number of TSVs;
wherein the second number of TSVs are formed longitudinally proximate to at least one DC electrode at longitudinal ends of the sequences of DC electrodes.

13. The system of claim 12 , wherein the second planar conductive material connected to the second number of TSVs is connected by a number of vias to a longitudinal DC rotate rail formed from the third planar conductive material to reduce unintended variation of an electrical field to which the number of DC electrodes contributes.

14. The system of claim 8 , wherein the number of longitudinal gaps are formed in the second planar conductive material to separate at least two longitudinal microwave (MW) rails positioned between the two longitudinal sequences of DC electrodes from the two longitudinal sequences of DC electrodes and the at least two RF rails.

15. The system of claim 8 , wherein the number of longitudinal gaps are formed in the second planar conductive material to separate a longitudinal ground rail positioned between two RF rails from the two longitudinal sequences of DC electrodes and the two RF rails.

16. The system of claim 8 , wherein:
at least one of the longitudinal MW rails is formed to include an input line for input of an oscillating MW current and an output line for output of the oscillating MW current; and
the input line is positioned more proximate to the first planar conductive material than the output line.

17. The system of claim 16 , further comprising:
a number of vias formed through a dielectric material that separates the input line and the output line; and
the input line and the output line connected to one another by a via through the dielectric material to enable reversal in a direction of the oscillating MW current.

Assignees

• Honeywell Int Inc

Inventors

• Youngner Daniel

Classifications

• H01J3/38 Primary

  Mounting, supporting, spacing, or insulating electron-optical or ion-optical arrangements · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• H01J49/0018

  Microminiaturised spectrometers, e.g. chip-integrated devices, Micro-Electro-Mechanical Systems [MEMS] · CPC title

• G21K1/00

  Arrangements for handling particles or ionising radiation, e.g. focusing or moderating · CPC title

• H01J9/14

  of non-emitting electrodes · CPC title