Substrate treatment system

Patent metadata

Field	Value
Publication number	US-10025190-B2
Application number	US-201415106915-A
Country	US
Kind code	B2
Filing date	Dec 15, 2014
Priority date	Dec 27, 2013
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

First claim

What is claimed:

1. A substrate treatment system for treating a substrate, comprising:
a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided;
an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system;
a light irradiation apparatus which performs post-exposure with one-shot exposure of an entire surface of the substrate using UV light on the resist film on the substrate after the exposure of patterns is performed and prior to treatment by the treatment apparatus; and
a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere,
wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere;
wherein the post-exposure station and the exposure apparatus are located in separate chambers; and
wherein the post-exposure station is provided between the exposure apparatus and the interface station.

2. The substrate treatment system according to claim 1 ,
wherein another interface station in a same atmosphere as an atmosphere of the post-exposure station is provided between the post-exposure station and the exposure apparatus.

3. The substrate treatment system according to claim 1 ,
wherein the post-exposure station is connected, in parallel with the exposure apparatus, to the interface station, and
wherein the interface station is adjustable to a reduced pressure or inert gas atmosphere.

4. The substrate treatment system according to claim 1 ,
wherein a thermal treatment apparatus which performs heat treatment after exposure processing, on the substrate after the post-exposure is installed in a same atmosphere as an atmosphere of the post-exposure station, or a treatment space thereof in which thermal treatment is performed is set to a same atmosphere as an atmosphere of the post-exposure station.

5. The substrate treatment system according to claim 1 , further comprising:
an inspection apparatus which inspects the substrate which has been subjected to post-exposure by the light irradiation apparatus and then to developing treatment; and
a control unit which controls the light irradiation apparatus, based on an inspection result of the inspection apparatus.

6. The substrate treatment system according to claim 1 ,
wherein the exposure of patterns is performed using EUV light, EB or ArF excimer laser light.

7. A substrate treatment system for treating a substrate, comprising:
a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided;
an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system;
a light irradiation apparatus which performs post-exposure with one-shot exposure of an entire surface of the substrate using UV light on the resist film on the substrate after the exposure of patterns is performed and prior to treatment by the treatment apparatus; and
a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere,
wherein the post-exposure station and the exposure apparatus are located in separate chambers;
wherein the post-exposure station is connected, in parallel with the exposure apparatus, to the interface station; and
wherein the interface station is adjustable to a reduced pressure or inert gas atmosphere.

8. The substrate treatment system according to claim 7 , further comprising:
an inspection apparatus which inspects the substrate which has been subjected to post-exposure by the light irradiation apparatus and then to developing treatment; and
a control unit which controls the light irradiation apparatus, based on an inspection result of the inspection apparatus.

9. The substrate treatment system according to claim 7 ,
wherein the exposure of patterns is performed using EUV light, EB or ArF excimer laser light.

10. The substrate treatment system according to claim 7 ,
wherein the post-exposure station is provided between the exposure apparatus and the interface station.

11. The substrate treatment system according to claim 10 ,
wherein another interface station in a same atmosphere as an atmosphere of the post-exposure station is provided between the post-exposure station and the exposure apparatus.

12. The substrate treatment system according to claim 7 ,
wherein a thermal treatment apparatus which performs heat treatment after exposure processing, on the substrate after the post-exposure is installed in a same atmosphere as an atmosphere of the post-exposure station, or a treatment space thereof in which thermal treatment is performed is set to a same atmosphere as an atmosphere of the post-exposure station.

Assignees

• Tokyo Electron Ltd
• Univ Osaka

Inventors

• Nagahara Seiji
• Shiraishi Gousuke
• Shimura Satoru
• Yoshihara Kousuke
• Kawakami Shinichiro
• Tomono Masaru
• Tagawa Seiichi
• Oshima Akihiro

Classifications

• H10P72/0474

  comprising at least one lithography chamber · CPC title

• H10P72/0464

  characterised by the construction of the transfer chamber · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• G03F7/20 Primary

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title