Niobium-containing film forming compositions and vapor deposition of niobium-containing films

Patent metadata

Field	Value
Publication number	US-9786671-B2
Application number	US-201615130529-A
Country	US
Kind code	B2
Filing date	Apr 15, 2016
Priority date	Apr 16, 2015
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.

First claim

We claim:

1. A Niobium-containing film forming composition comprising a precursor having the formula

wherein each R, R 1 , R 2 and R 3 is independently H, an alkyl group, or R′ 3 Si, with each R′ independently being H or an alkyl group.

2. The Niobium-containing film forming composition of claim 1 , wherein R is iPr and each R 2 is H.

3. The Niobium-containing film forming composition of claim 1 , wherein R is iPr and each R 2 is Me.

4. The Niobium-containing film forming composition of claim 1 , wherein R is tBu and each R 2 is H.

5. The Niobium-containing film forming composition of claim 1 , wherein R is tBu and each R 2 is Me.

6. The Niobium-containing film forming composition of claim 5 , wherein each R 1 and R 3 is iPr.

7. The Niobium-containing film forming composition of claim 1 , wherein R is tAmyl and each R 2 is H.

8. The Niobium-containing film forming composition of claim 1 , wherein R is tAmyl and each R 2 is Me.

9. The Niobium-containing film forming composition of claim 1 , wherein R is tBu, each R 1 is iPr, and each R 3 is iPr.

10. A method of forming a Niobium-containing film, the method comprising introducing into a reactor having a substrate therein a vapor of the Niobium-containing film forming composition of claim 1 ; and depositing at least part of the precursor onto the substrate.

11. The method of claim 10 , further comprising introducing a reactant into the reactor.

12. The method of claim 11 , wherein the reactant is selected from the group consisting of H 2 , H 2 CO, N 2 H 4 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof, and mixtures thereof.

13. The method of claim 11 , wherein the reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, N 2 O, NO 2 , oxygen radicals thereof, and mixtures thereof.

14. The method of claim 11 , wherein the Niobium-containing film forming composition and the reactant are introduced into the reactor simultaneously and the reactor is configured for chemical vapor deposition.

15. The method of claim 11 , wherein the Niobium-containing film forming composition and the reactant are introduced into the chamber sequentially and the reactor is configured for atomic layer deposition.

16. The method of claim 10 , wherein the substrate is a dielectric layer.

17. The method of claim 16 , wherein the substrate is ZrO 2 and the Niobium-containing film forming composition is used to form a DRAM capacitor.

18. The method of claim 11 , further comprising plasma treating the reactant.

19. The method of claim 11 , wherein the Niobium-containing film forming precursor is Nb(=NtBu)(N iPr Me-amd) 3 or Nb(=NtAmyl)(N iPr Me-amd) 3 and the reactant is NH 3 or O 3 .

Assignees

• L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
• L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventors

• Lansalot-Matras Clément
• Noh Wontae

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• H01L28/60

  Electricity · mapped topic

• H01L27/10805

  Electricity · mapped topic