Bipolar transistor device and method of fabrication

Patent metadata

Field	Value
Publication number	US-10014398-B2
Application number	US-201715494868-A
Country	US
Kind code	B2
Filing date	Apr 24, 2017
Priority date	Mar 12, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent to a base-collector junction of said active region. The isolation region comprises a gate terminal arranged to be biased independently of a collector, base or emitter terminal of said transistor.

First claim

The invention claimed is:

1. A bipolar transistor, comprising:
an active region;
a collector region;
a sinker region serves to connect a collector terminal;
a substrate comprising an isolation region having a first side wall adjacent to said active region, a second side wall adjacent to said sinker region, and a base adjacent to said collector region;
a dielectric disposed on said first and second side walls and said base, said dielectric having a first thickness on said first sidewall, a second thickness on said base and a third thickness on said second sidewall, wherein said first thickness is thin relative to said second and third thicknesses, and said third thickness is thick relative to said second and first thicknesses;
a field plate formed of a semiconductor material in said isolation region, wherein said field plate is adjacent to a base-collector junction of said active region;
wherein said dielectric defines a gate dielectric proximal to said base-collection junction.

2. The bipolar transistor of claim 1 wherein said semiconductor material is a polycrystalline semiconductor material.

3. The bipolar transistor of claim 2 , wherein said polycrystalline semiconductor material comprises a base or an emitter of said bipolar transistor.

4. The bipolar transistor of claim 1 , wherein said gate dielectric and said semiconductor material define a gate terminal of said transistor.

5. The bipolar transistor of claim 4 , said gate terminal is arranged to be biased independently of a collector, base or emitter terminal of said transistor.

Assignees

• Nxp Bv

Inventors

• Donkers Johannes
• Dinh Viet Thanh
• Vanhoucke Tony
• Gridelet Evelyne
• Heringa Anco
• Klaassen Dirk

Classifications

• H01L29/66242

  Electricity · mapped topic

• H01L29/407

  Electricity · mapped topic

• H01L29/0649

  Electricity · mapped topic

• H01L29/737 Primary

  Electricity · mapped topic

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title