Substrate treatment method and substrate treatment apparatus

Patent metadata

Field	Value
Publication number	US-10014186-B2
Application number	US-201614989241-A
Country	US
Kind code	B2
Filing date	Jan 6, 2016
Priority date	Jun 1, 2015
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H 2 O) of a first content rate to etch the first metallic film. The second liquid includes water (H 2 O) at a second content rate higher than the first content rate after the etching has started.

First claim

The invention claimed is:

1. A substrate treatment method comprising:
bringing a first metallic film on a substrate into contact with a first liquid comprising an oxidizing agent, a complexing agent, and water (H 2 O) of a first content rate to etch the first metallic film;
mixing, into the first liquid, a second liquid comprising water (H 2 O) at a second content rate higher than the first content rate after the etching has started; and
bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film.

2. The method of claim 1 ,
wherein the metallic film which has been etched by the first liquid and the metallic film which has been etched by the liquid in which the first liquid and the second liquid are mixed are provided on the same substrate.

3. The method of claim 1 ,
wherein the metallic film etched by the first liquid and the metallic film etched by the liquid in which the first liquid and the second liquid are mixed are provided on different substrates.

4. The method of claim 1 ,
wherein the temperature of the first liquid is 80° or more.

5. The method of claim 1 ,
wherein the first metallic film etched by the first liquid comprises tungsten.

6. The method of claim 1 ,
wherein the oxidizing agent comprises at least one of a nitric acid (HNO 3 ), hydrogen peroxide water (H 2 O 2 ), and ozone (O 3 ).

7. The method of claim 1 ,
wherein the complexing agent comprises a phosphoric acid (H 3 PO 4 ).

8. The method of claim 1 ,
wherein the first liquid further comprises a buffer.

9. The method of claim 8 ,
wherein the buffer comprises an acetic acid (CH 3 COOH).

Assignees

• Toshiba Memory Corp

Inventors

• Akeboshi Yuya
• Tomita Hiroshi
• Okuchi Hisashi
• Yoshimizu Yasuhito
• Yamada Hiroaki

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0422

  for wet etching · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• C23F1/40

  for etching other metallic material · CPC title