Method of corner rounding and trimming of nanowires by microwave plasma

Patent metadata

Field	Value
Publication number	US-10008564-B2
Application number	US-201615342968-A
Country	US
Kind code	B2
Filing date	Nov 3, 2016
Priority date	Nov 3, 2015
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

Embodiments of the invention describe a method of corner rounding and trimming of nanowires used in semiconductor devices. According to one embodiment, the method includes providing in a process chamber a plurality of nanowires separated from each other by a void, where the plurality of nanowires have a height and at least substantially right angle corners, forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma, removing the oxidized surface layer to trim the height and round the corners of the plurality of nanowires, and repeating the forming and removing at least once until the plurality of nanowires have a desired trimmed height and rounded corners.

First claim

What is claimed is:

1. A method of corner rounding and trimming of nanowires, the method comprising:
providing in a process chamber a plurality of nanowires separated from each other by a void, wherein the plurality of nanowires have a height and at least substantially right angle corners;
forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma;
removing the oxidized surface layer to trim the height and round the corners of the plurality of nanowires; and
repeating the forming and removing at least once until the plurality of nanowires have a desired trimmed height and rounded corners.

2. The method of claim 1 , wherein the plurality of nanowires consist of Si.

3. The method of claim 1 , wherein the plurality of nanowires are selected from the group consisting of Si, SiGe, and compound semiconductors.

4. The method of claim 1 , wherein the oxidizing microwave plasma includes plasma excited O 2 gas.

5. The method of claim 1 , wherein the removing includes a chemical oxide removal (COR) process comprising:
exposing the oxidized surface layer to HF gas and NH 3 gas to form reaction products on the plurality of nanowires; and
heat-treating the plurality of nanowires to desorb the reaction products.

6. The method of claim 1 , wherein the oxidizing microwave plasma utilizes a gas pressure of less or equal to 1 Torr in the process chamber.

7. The method of claim 1 , wherein the oxidizing microwave plasma utilizes a gas pressure greater than 1 Torr in the process chamber.

8. A method of corner rounding and trimming of nanowires by microwave plasma, the method comprising:
providing in a process chamber a plurality of nanowires separated from each other by a void, wherein the plurality of nanowires have a height and at least substantially right angle corners;
forming a first oxidized surface layer on the plurality of nanowires using a first oxidizing microwave plasma at a first gas pressure;
forming a second oxidized surface layer on the plurality of nanowires using a second oxidizing microwave plasma at a second gas pressure that is different than the first gas pressure;
removing the first and second oxidized surface layers to trim the height and round the corners of the plurality of nanowires; and
repeating each of the forming and removing steps at least once until the plurality of nanowires have a desired trimmed height and rounded corners.

9. The method of claim 8 , wherein the plurality of nanowires consist of Si.

10. The method of claim 8 , wherein the plurality of nanowires are selected from the group consisting of Si, SiGe, and compound semiconductors.

11. The method of claim 8 , wherein the first and second oxidizing microwave plasmas include plasma excited O 2 gas.

12. The method of claim 8 , wherein the removing includes a chemical oxide removal (COR) process comprising:
exposing the first and second oxidized surface layers to HF gas and NH 3 gas to form reaction products on the plurality of nanowires; and
heat-treating the plurality of nanowires to desorb the reaction products.

13. The method of claim 8 , wherein the first gas pressure is less than the second gas pressure.

14. The method of claim 8 , wherein the first gas pressure is less or equal to 1 Torr and the second gas pressure is greater than 1 Torr.

15. A method of corner rounding and trimming of nanowires by microwave plasma, the method comprising:
providing in a process chamber a plurality of nanowires separated from each other by a void, wherein the plurality of nanowires have a height and at least substantially right angle corners;
forming a first oxidized surface layer on the plurality of nanowires using a first oxidizing microwave plasma at a gas pressure less or equal to 1 Torr;
forming a second oxidized surface layer on the plurality of nanowires using a second oxidizing microwave plasma at a second gas pressure greater than 1 Torr;
removing the first and second oxidized surface layers to trim the height and round the corners of the plurality of nanowires; and
repeating each of the forming and removing steps at least once until the plurality of nanowires have a desired trimmed height and rounded corners.

16. The method of claim 15 , wherein the plurality of nanowires consist of Si.

17. The method of claim 15 , wherein the plurality of nanowires are selected from the group consisting of Si, SiGe, and compound semiconductors.

18. The method of claim 15 , wherein the first and second oxidizing microwave plasmas include plasma excited O 2 gas.

19. The method of claim 15 , wherein the removing includes a chemical oxide removal (COR) process comprising:
exposing the first and second oxidized surface layers to HF gas and NH 3 gas to form reaction products on the plurality of nanowires; and
heat-treating the plurality of nanowires to desorb the reaction products.

Assignees

• Tokyo Electron Ltd

Inventors

• Tapily Kandabara N
• Trickett Ying
• Tamura Chihiro
• Wajda Cory
• Leusink Gerrit J
• Maekawa Kaoru

Classifications

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/6309

  of silicon in uncombined form, i.e. pure silicon · CPC title

• H10P14/6308

  of Group IV semiconductors · CPC title