Species controlled chemical vapor deposition

Patent metadata

Field	Value
Publication number	US-10006123-B2
Application number	US-201615151203-A
Country	US
Kind code	B2
Filing date	May 10, 2016
Priority date	May 10, 2016
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

A method for chemical vapor deposition on a substrate is disclosed. The method may include directing a process gas into a reaction chamber, and heating the process gas in the reaction chamber. Heating the process gas in the reaction chamber may decompose the process gas to thereby generate a plurality of decomposition products. The method may also include applying one or more biasing fields and/or waves to the process gas upstream of the substrate, and reacting the process gas with the substrate. The one or more biasing fields and/or waves may include electromagnetic waves, electric fields, and/or magnetic fields. The biasing fields and/or waves may urge at least a portion of the process gas towards or away from the substrate.

First claim

What is claimed is:

1. A method for chemical vapor deposition on a substrate, comprising:
directing a process gas into a reaction chamber;

decomposing the process gas in the reaction chamber to form a decomposition product in the process gas;
applying one or more biasing fields and/or waves to the process gas laterally adjacent and upstream of the substrate such that the fields and/or waves urge at least a portion of the process gas away from the substrate;
reacting the decomposition product of the process gas with a surface of the substrate to deposit a product on the surface,
wherein the one or more biasing fields and/or waves are applied in a direction substantially perpendicular to the surface of the substrate,
wherein the one or more biasing fields and/or waves comprise a magnetic field, an electromagnetic wave, or combinations thereof.

2. The method of claim 1 , wherein the biasing fields and/or waves further comprises an electric field.

3. The method of claim 1 , wherein the biasing fields and/or waves apply a biasing force to at least a portion of the process gas.

4. The method of claim 3 , wherein decomposing of the process gas produces a plurality of decomposition products, and the biasing force urges at least one of the plurality of decomposition products away from the substrate.

5. The method of claim 1 , wherein the one or more biasing fields and/or waves consists of an electric field and at least one of a magnetic field or an electromagnetic wave.

6. A method for a chemical vapor deposition on a substrate, comprising:
directing a process gas into a reaction chamber of a chemical vapor deposition system;
decomposing the process gas in the reaction chamber with a furnace disposed about the reaction chamber to form a decomposition product in the process gas;
urging the decomposition product of the process gas towards or away from the substrate by applying one or more biasing fields and/or waves to the process gas upstream of the substrate; and
reacting the decomposition product of the process gas with a surface of the substrate to deposit a product on the surface of the substrate,
wherein reacting the decomposition product with the surface of the substrate to deposit the product on the surface of the substrate comprises facilitating a reaction between the decomposition product and the substrate with a catalyst deposited on the substrate,
wherein the one or more biasing fields and/or waves are applied in a direction substantially perpendicular to the surface of the substrate, and
wherein the one or more biasing fields and/or waves comprise a magnetic field, an electromagnetic wave, or combinations thereof.

7. The method of claim 6 , wherein the biasing fields and/or waves further comprises an electric field.

8. The method of claim 6 , wherein the process gas comprises an impurity, and the biasing fields and/or waves urge the impurity away from the substrate.

9. The method of claim 6 , wherein decomposing of the process gas produces a plurality of decomposition products, and the biasing force urges at least one of the plurality of decomposition products away from the substrate.

10. The method of claim 6 , wherein decomposing of the process gas produces a plurality of decomposition products, and the biasing force urges at least one of the plurality of decomposition products towards the substrate.

11. The method of claim 6 , further comprising varying an intensity of the biasing fields and/or waves applied to the process gas.

12. The method of claim 6 , wherein the one or more biasing fields and/or waves consists of an electric field and at least one of a magnetic field or an electromagnetic wave.

13. The method of claim 6 , wherein the one or more biasing fields and/or waves are applied to the process gas at a position laterally adjacent and upstream to the surface of the substrate.

14. The method of claim 6 , wherein the one or more biasing fields and/or waves consists of a magnetic field or an electromagnetic wave.

Assignees

• Boeing Co

Inventors

• Humfeld Keith Daniel
• Cherry De'Andre James

Classifications

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/46 Primary

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/48

  by irradiation, e.g. photolysis, radiolysis, particle radiation · CPC title

• C23C16/448

  characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title