Corrosion resistant abatement system

Patent metadata

Field	Value
Publication number	US-10005025-B2
Application number	US-201514877753-A
Country	US
Kind code	B2
Filing date	Oct 7, 2015
Priority date	Oct 15, 2014
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.

First claim

The invention claimed is:

1. A plasma source, comprising:
a body including an inlet and an outlet, wherein a central axis of the body extends through the inlet and the outlet;
an RF coil surrounding the body; and
a channel formed within the body and fluidly coupling the inlet and the outlet, wherein the channel comprises a tortuous portion, wherein an inside surface of the channel is coated with yttrium oxide, diamond-like carbon, or aluminum oxide silicon magnesium yttrium.

2. The plasma source of claim 1 , wherein the body is spherical and is made of quartz or aluminum oxide.

3. The plasma source of claim 1 , wherein the body is hollow.

4. The plasma source of claim 1 , wherein the body is a monolithic piece of material.

5. The plasma source of claim 1 , wherein the tortuous portion of the channel includes longitudinal portions and bend portions.

6. The plasma source of claim 5 , wherein the longitudinal portions of the channel is substantially parallel to a central axis of the body.

7. The plasma source of claim 5 , wherein the longitudinal portions of the channel is substantially perpendicular to a central axis of the body.

8. The plasma source of claim 1 , wherein the channel comprises a plurality of parallel passages and at least two sub-channels connecting adjacent passages.

9. The plasma source of claim 8 , wherein each of the plurality of parallel passages is substantially parallel to the central axis of the body.

10. The plasma source of 8 , wherein each of the plurality of parallel passages is substantially perpendicular to the central axis of the body.

Assignees

• Applied Materials Inc
• Applied Materials Inc

Inventors

• Raj Govinda
• Agarwal Monika
• Mohiuddin Hamid
• Narendrnath Kadthala R

Classifications

• H01J37/32082

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• B01D2259/818

  Employing electrical discharges or the generation of a plasma · CPC title

• B01D2258/0216

  from CVD treatment or semi-conductor manufacturing · CPC title

• B01D53/68

  Halogens or halogen compounds · CPC title

• H01J37/32844

  Treating effluent gases · CPC title