Substrate Processing Method, Apparatus, and System
US-2024363405-A1 · Oct 31, 2024 · US
US10002747B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10002747-B2 |
| Application number | US-201213431950-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 27, 2012 |
| Priority date | Mar 27, 2012 |
| Publication date | Jun 19, 2018 |
| Grant date | Jun 19, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Methods and apparatus for supplying gas in a plasma processing system that employs the single line drop approach wherein a regulator is shared among multiple mass flow controllers. In one or more embodiments, an accumulator is provided and coupled in gaseous communication with a shared manifold to reduce pressure spikes and dips. A filter, which may be replaceable or non-replaceable separate from the accumulator, is integrated with the accumulator in one or more embodiments.
Opening claim text (preview).
What is claimed is: 1. A plasma processing system for supplying a processing gas to a plurality of plasma chambers, the plasma processing system comprising: a regulator configured to receive the processing gas; an accumulator connected to the regulator, wherein the regulator is configured to regulate supply of the processing gas to the accumulator to maintain a stable pressure of the processing gas supplied to the accumulator; a shared manifold connected to the accumulator, wherein the accumulator is configured to (i) while supplying a first portion of the processing gas to the shared manifold, receive a second portion of the processing gas from the regulator and accumulate the processing gas, and (ii) absorb at least portions of spikes and dips in pressures within the shared manifold; and a plurality of mass flow controllers connected to the shared manifold, wherein the accumulator is connected between the regulator and the plurality of mass flow controllers, and wherein the plurality of mass flow controllers control flow of portions of the processing gas out of branches of the shared manifold to the plurality of plasma chambers. 2. The plasma processing system of claim 1 , wherein: the accumulator comprises a gas containment structure having a cross-sectional area that is larger than cross-sectional area of a portion of the manifold; and the accumulator is connected to the portion of the manifold. 3. The plasma processing system of claim 1 , further comprising a filter, wherein the filter is integrated within the accumulator and filters the processing gas prior to be supplied from the accumulator to the shared manifold, the plurality of mass flow controllers and the plurality of plasma chambers. 4. The plasma processing system of claim 3 , wherein the filter is integrated in an input end of the accumulator. 5. The plasma processing system of claim 4 , wherein the accumulator and filter are configured to allow the filter to be inserted into the accumulator and held via a coupling, such that the filter is replaceable. 6. The plasma processing system of claim 1 , wherein the accumulator is implemented in-line with the shared manifold. 7. The plasma processing system of claim 5 , wherein: the accumulator is coupled to the shared manifold via the coupling, and the coupling is a ‘T’-shaped coupling. 8. The plasma processing system of claim 1 , wherein the accumulator is disposed remotely from the plurality of mass flow controllers such that the accumulator is not disposed at any of the multiple processing chambers. 9. The plasma processing system of claim 1 , wherein a combined volume of the accumulator and the shared manifold is at least 3 times a volume of the shared manifold without the accumulator. 10. The plasma processing system of claim 1 , wherein: the regulator is directly coupled to the accumulator; and the accumulator is directly coupled to the shared manifold. 11. The plasma processing system of claim 4 , further comprising a ‘T’-shaped coupling, wherein: the filter is implemented in the ‘T’-shaped coupling; the accumulator receives the processing gas via the ‘T’-shaped coupling; the ‘T’-shaped coupling comprises a first portion and a second portion; the first portion of the ‘T’-shaped coupling is disposed on an exterior of the accumulator; and the second portion of the ‘T’-shaped coupling is disposed within the accumulator.
Gas supply means · CPC title
Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title
characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title
Multiple chambers, e.g. cluster tools · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.