System and method for controllable non-volatile metal removal

Patent metadata

Field	Value
Publication number	US-10000853-B2
Application number	US-201715439079-A
Country	US
Kind code	B2
Filing date	Feb 22, 2017
Priority date	Mar 13, 2015
Publication date	Jun 19, 2018
Grant date	Jun 19, 2018

Abstract

A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.

First claim

What is claimed is:

1. A method of removing metal from a substrate, comprising:
introducing one or more processing gasses into a chamber at a first temperature, wherein a substrate is disposed in the chamber;
chemically reacting the one or more processing gasses with metal disposed on the substrate to form a removable compound, where the removable compound sublimes at a sublimation temperature, and wherein the first temperature is less than the sublimation temperature;
exhausting the one or more processing gasses from the chamber after the chemically reacting while the temperature of the chamber is less than the sublimation temperature so that no further chemical reactions occur on the substrate;
increasing a temperature within the chamber to a second temperature, greater than the sublimation temperature, after the exhausting, so that the removable compound becomes gaseous; and
eliminating the gaseous removable compound from the chamber while the temperature of the chamber is greater than the sublimation temperature.

2. The method of claim 1 , further comprising repeating the introducing, chemically reacting, exhausting, increasing and eliminating a plurality of times until a desired amount of metal is removed from the substrate.

3. The method of claim 1 , wherein the metal comprises platinum.

4. The method of claim 3 , wherein the one or more processing gasses comprise chlorine and carbon monoxide.

5. The method of claim 4 , wherein the removable compound comprises chlorinated platinum carbonyl (Pt(CO) 2 Cl 2 ).

6. A method of removing metal from a substrate, comprising:
introducing a first processing gas into a chamber where a substrate is disposed at a first temperature;
chemically reacting the first processing gas with metal disposed on the substrate to form a precursor of a removable compound, where the removable compound sublimes at a sublimation temperature, and wherein the first temperature is less than the sublimation temperature;
exhausting the first processing gas from the chamber after the chemically reacting while the temperature of the chamber is less than the sublimation temperature so that no further chemical reactions occur on the substrate;
increasing a temperature within the chamber to a second temperature, greater than the sublimation temperature, after the exhausting;
introducing a second processing gas into the chamber after the exhausting, so that the second processing gas reacts with the precursor to form the removable compound, and wherein the removable compound becomes gaseous; and
eliminating the gaseous removable compound from the chamber while the temperature of the chamber is greater than the sublimation temperature.

7. The method of claim 6 , further comprising repeating the introducing the first processing gas, chemically reacting, exhausting, increasing, introducing the second processing gas and eliminating a plurality of times until a desired amount of metal is removed from the substrate.

8. The method of claim 6 , wherein the metal comprises platinum.

9. The method of claim 8 , wherein the first processing gas comprises chlorine and the second processing gas comprises carbon monoxide.

10. The method of claim 9 , wherein the removable compound comprises chlorinated platinum carbonyl (Pt(CO) 2 Cl 2 ).

11. The method of claim 9 , wherein the precursor comprises platinum chloride (PtCl 2 ).

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Chen Tsung-Liang
• Schmiege Benjamin
• Anthis Jeffrey W
• Gilchrist Glen

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• B05B15/00

  Details of spraying plant or spraying apparatus not otherwise provided for; Accessories · CPC title

• C23F4/00

  Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 · CPC title

• H01J37/32834

  Exhausting · CPC title