Magneto-resistive random-access memory (MRAM) devices and methods of forming the same
US-12514130-B2 · Dec 30, 2025 · US
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Wang Cherng-Yu patents
Wang Cherng-Yu is listed as an inventor on 6 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Cherng-Yu |
| Total patents | 6 |
| First publication | Dec 7, 2023 |
| Latest publication | Dec 30, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Magneto-resistive random-access memory (mram) devices and methods of forming the same
US-2025351738-A1 · Nov 13, 2025 · US
Semiconductor devices and methods for fabrication thereof
US-12363924-B2 · Jul 15, 2025 · US
Semiconductor devices and methods for fabrication thereof
US-2024387615-A1 · Nov 21, 2024 · US
Magneto-resistive random-access memory (mram) devices and methods of forming the same
US-2023403948-A1 · Dec 14, 2023 · US
Semiconductor devices and methods for fabrication thereof
US-2023395647-A1 · Dec 7, 2023 · US
Recent patents
Latest publications not already listed above.
No data yet.
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 6 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H01F10/3286 | 3 |
| H01F10/3272 | 3 |
| H01F10/3259 | 3 |
| H10N50/80 | 3 |
| H10B61/00 | 3 |