Magneto-resistive random-access memory (MRAM) devices and methods of forming the same

Patent metadata

Field	Value
Publication number	US-12514130-B2
Application number	US-202217838235-A
Country	US
Kind code	B2
Filing date	Jun 12, 2022
Priority date	Jun 12, 2022
Publication date	Dec 30, 2025
Grant date	Dec 30, 2025

Abstract

Embodiments of the present disclosure provide a magnetic tunnel junction (MTJ) structure for storing a data. In one embodiment, the MJT structure includes a first ferromagnetic layer, a second ferromagnetic layer disposed above the first ferromagnetic layer, a first dielectric layer disposed between and in contact with the first ferromagnetic layer and the second ferromagnetic layer, a plurality of metal particles disposed in contact with the second ferromagnetic layer, wherein the metal particles are distributed in a discrete and non-continuous manner, and a second dielectric layer disposed over the plurality of metal particles.

First claim

The invention claimed is:

1 . A method of forming a perpendicular magnetic tunnel junction (p-MTJ), comprising:
forming a first ferromagnetic layer over a substrate, the first ferromagnetic layer having a fixed magnetization oriented in a direction perpendicular to a surface thereof; depositing an insulating barrier layer on the first ferromagnetic layer; forming a second ferromagnetic layer on the insulating barrier layer, the second ferromagnetic layer having a magnetization that is switchable between a parallel direction and an anti-parallel direction with respect to the fixed magnetization of the first ferromagnetic layer; providing a plurality of metal particles on the second ferromagnetic layer, wherein the metal particles are formed of a non-magnetic metal material; and forming a dielectric layer on the plurality of metal particles such that at least one or more metal particles of the plurality of metal particles are embedded in the dielectric layer.

2 . The method of claim 1 , wherein the plurality of metal particles is formed on the second ferromagnetic layer in a discrete and non-continuous manner so that a portion of the dielectric layer is in contact with the the one or more of the plurality of metal particles.

3 . A method of forming a perpendicular magnetic tunnel junction (p-MTJ), comprising:
forming a first ferromagnetic layer over an electrode, the first ferromagnetic layer having a fixed magnetization oriented in a direction perpendicular to a surface thereof; forming an insulating barrier layer on the first ferromagnetic layer; forming an anti-ferromagnetic layer on the insulating barrier layer; forming a second ferromagnetic layer on the anti-ferromagnetic layer, the second ferromagnetic layer having a magnetization that is switchable between a parallel direction and an anti-parallel direction with respect to the fixed magnetization of the first ferromagnetic layer; sputtering a plurality of metal particles on the second ferromagnetic layer, wherein the plurality of metal particles is formed of a non-magnetic metal material; and forming a dielectric layer on the plurality of metal particles such that the plurality of metal particles are embedded in the dielectric layer.

4 . The method of claim 3 , wherein the dielectric layer is in contact with the plurality of metal particles and the second ferromagnetic layer.

5 . The method of claim 4 , wherein the dielectric layer is deposited so that at least two adjacent metal particles of the plurality of metal particles are separated from each other by the dielectric layer.

6 . The method of claim 3 , wherein the plurality of metal particles comprises molybdenum (Mo), magnesium (Mg), chromium (Cr), ruthenium (Ru), palladium (Pd), tantalum (Ta), titanium (Ti), platinum (Pt), tungsten (W), zirconium (Zr), hafnium (Hf), yttrium (Y), rhodium (Rh), or the like, or any combination thereof.

7 . The method of claim 1 , wherein the plurality of metal particles comprises molybdenum (Mo), magnesium (Mg), chromium (Cr), ruthenium (Ru), palladium (Pd), tantalum (Ta), titanium (Ti), platinum (Pt), tungsten (W), zirconium (Zr), hafnium (Hf), yttrium (Y), rhodium (Rh), or the like, or any combination thereof.

8 . The method of claim 1 , wherein the plurality of metal particles is deposited in the form of a monolayer layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Peng Hsuan-Yi
• Wang Cherng-Yu
• Lin Jen-Po
• Wei Hsiao-Kuan

Classifications

• H10N50/01

  Manufacture or treatment · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/3286 Primary

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/3259

  Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer · CPC title