Backside fuse structure utilizing backside contact
US-2025096127-A1 · Mar 20, 2025 · US
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Moy Dan patents
Moy Dan is listed as an inventor on 20 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Moy Dan |
| Total patents | 20 |
| First publication | May 5, 2015 |
| Latest publication | Mar 20, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Backside fuse connected to backside back end of the line network
US-2025096126-A1 · Mar 20, 2025 · US
Charge trap memory devices
US-11367734-B2 · Jun 21, 2022 · US
Charge trap memory devices
US-2021242230-A1 · Aug 5, 2021 · US
Back-end electrically programmable fuse
US-9893011-B2 · Feb 13, 2018 · US
Back-end electrically programmable fuse
US-9685404-B2 · Jun 20, 2017 · US
Rebalancing in twin cell memory schemes to enable multiple writes
US-9418745-B1 · Aug 16, 2016 · US
E-fuse structure with methods of fusing the same and monitoring material leakage
US-9337144-B2 · May 10, 2016 · US
E-fuse structure with methods of fusing the same and monitoring material leakage
US-9337143-B2 · May 10, 2016 · US
Back-end electrically programmable fuse
US-2016027733-A1 · Jan 28, 2016 · US
Recent patents
Latest publications not already listed above.
E-fuse structure with methods of fusing the same and monitoring material leakage
US-2016027734-A1 · Jan 28, 2016 · US
Precision trench capacitor
US-9240406-B2 · Jan 19, 2016 · US
Electrical fuse with bottom contacts
US-9171800-B2 · Oct 27, 2015 · US
Precision trench capacitor
US-2015303191-A1 · Oct 22, 2015 · US
Electrical fuse with bottom contacts
US-2015255393-A1 · Sep 10, 2015 · US
E-fuse structure with methods of fusing the same and monitoring material leakage
US-2015214149-A1 · Jul 30, 2015 · US
Vertical electronic fuse
US-9064871-B2 · Jun 23, 2015 · US
Fin eFuse formed by trench silicide process
US-9041151-B2 · May 26, 2015 · US
Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology
US-2015138891-A1 · May 21, 2015 · US
Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology
US-9025386-B1 · May 5, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 15 |
| Globalfoundries Inc | 6 |
| Samsung Electronics Co Ltd | 4 |
| Globalfoundries Us Inc | 2 |
| Internatioal Business Machines Corp | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10W20/493 | 13 |
| H01L23/5256 | 12 |
| H10W20/42 | 8 |
| H01L23/5226 | 7 |
| G11C16/10 | 5 |