Electronic device including a power transistor
US-2025280577-A1 · Sep 4, 2025 · US
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Moens Peter patents
Moens Peter is listed as an inventor on 103 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Moens Peter |
| Total patents | 103 |
| First publication | Jun 30, 2015 |
| Latest publication | Sep 4, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Monolithic semiconductor device assemblies
US-2025126853-A1 · Apr 17, 2025 · US
Non-linear hemt devices
US-2025126827-A1 · Apr 17, 2025 · US
Semiconductor devices with orthogonal voltage blocking structures and methods of manufacturing semiconductor devices
US-2025113557-A1 · Apr 3, 2025 · US
Non-linear HEMT devices
US-12183815-B2 · Dec 31, 2024 · US
Monolithic semiconductor device assemblies
US-12183785-B2 · Dec 31, 2024 · US
Hemt devices with reduced size and high alignment tolerance
US-2024395922-A1 · Nov 28, 2024 · US
High electron mobility transistor
US-12068408-B2 · Aug 20, 2024 · US
HEMT devices with reduced size and high alignment tolerance
US-12068406-B2 · Aug 20, 2024 · US
Process of forming an electronic device including a doped gate electrode
US-11942326-B2 · Mar 26, 2024 · US
Recent patents
Latest publications not already listed above.
Vertical shielded gate accumulation field effect transistor
US-2023352577-A1 · Nov 2, 2023 · US
Monolithic semiconductor device assemblies
US-2023352525-A1 · Nov 2, 2023 · US
Monolithic semiconductor device assemblies
US-11742381-B2 · Aug 29, 2023 · US
Electronic device including a high electron mobility transistor including a gate electrode and a gate interconnect and a method of using the same
US-11444190-B2 · Sep 13, 2022 · US
Hemt devices with reduced size and high alignment tolerance
US-2022262940-A1 · Aug 18, 2022 · US
Semiconductor devices with class iv channel region and class iii-v drift region
US-2022262945-A1 · Aug 18, 2022 · US
Non-linear hemt devices
US-2022216332-A1 · Jul 7, 2022 · US
Electronic Device Including a Doped Gate Electrode and a Process of Forming the Same
US-2022189780-A1 · Jun 16, 2022 · US
Fin transistors with semiconductor spacers
US-2022181462-A1 · Jun 9, 2022 · US
Process of forming an electronic device including a transistor structure
US-11342443-B2 · May 24, 2022 · US
Enhancement mode MISHEMT with GaN channel regrowth under a gate area
US-11335798-B2 · May 17, 2022 · US
Method of forming a semiconductor device
US-2022020872-A1 · Jan 20, 2022 · US
Monolithic semiconductor device assemblies
US-2022020848-A1 · Jan 20, 2022 · US
Enhancement mode mishemt with gan channel regrowth under a gate area
US-2021210627-A1 · Jul 8, 2021 · US
Opto-electronic HEMT
US-10964733-B2 · Mar 30, 2021 · US
Opto-electronic hemt
US-2021066355-A1 · Mar 4, 2021 · US
Electronic Device Including a High Electron Mobility Transistor Including a Gate Electrode and a Gate Interconnect and a Method of Using the Same
US-2021005740-A1 · Jan 7, 2021 · US
Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film
US-10818787-B1 · Oct 27, 2020 · US
Electronic Device Including a High Electron Mobility Transistor Including a Gate Electrode and a Dielectric Film
US-2020335617-A1 · Oct 22, 2020 · US
Electronic device including high electron mobility transistors
US-10811527-B2 · Oct 20, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Semiconductor Components Ind Llc | 83 |
| Semiconductor Components Ind | 20 |
| Guitart Jaume Roig | 1 |
| Moens Peter | 1 |
| Hossain Zia | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 69 |
| H01L29/2003 | 60 |
| H10D30/475 | 59 |
| H10D30/015 | 53 |
| H01L29/66462 | 39 |