Semiconductor devices with epitaxial source/drain region with a bottom dielectric and methods of fabrication thereof
US-2025366028-A1 · Nov 27, 2025 · US
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Lin Che-Yu patents
Lin Che-Yu is listed as an inventor on 47 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lin Che-Yu |
| Total patents | 47 |
| First publication | Sep 22, 2015 |
| Latest publication | Nov 27, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
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Fin field-effect transistor device and method of forming the same
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Semiconductor device and method
US-12266687-B2 · Apr 1, 2025 · US
Semiconductor devices with epitaxial source/drain region with a bottom dielectric and methods of fabrication thereof
US-2025081520-A1 · Mar 6, 2025 · US
Recent patents
Latest publications not already listed above.
Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a Fin and resulting semiconductor devices
US-12237404-B2 · Feb 25, 2025 · US
FinFET device and method of forming same
US-12218222-B2 · Feb 4, 2025 · US
Epitaxial structures for semiconductor devices and manufacturing methods thereof
US-2025022957-A1 · Jan 16, 2025 · US
Safe driving detection and auxiliary system
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Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
Wireless vehicle control device
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Harmonic shear wave imaging
US-11980502-B2 · May 14, 2024 · US
Semiconductor device
US-2023378361-A1 · Nov 23, 2023 · US
Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devices
US-2023343858-A1 · Oct 26, 2023 · US
Method for manufacturing semiconductor device
US-11749756-B2 · Sep 5, 2023 · US
Semiconductor device and method
US-2023261052-A1 · Aug 17, 2023 · US
Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devices
US-11721745-B2 · Aug 8, 2023 · US
Fin field-effect transistor device and method of forming the same
US-2023103483-A1 · Apr 6, 2023 · US
Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions
US-11581425-B2 · Feb 14, 2023 · US
Method for manufacturing semiconductor structure with reduced nodule defects
US-11569084-B2 · Jan 31, 2023 · US
Fin field-effect transistor device and method of forming the same
US-11527442-B2 · Dec 13, 2022 · US
FINFET Device and Method of Forming Same
US-2022302282-A1 · Sep 22, 2022 · US
Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions
US-2022293773-A1 · Sep 15, 2022 · US
Method for manufacturing semiconductor structure with reduced nodule defects
US-2022293415-A1 · Sep 15, 2022 · US
FinFET device and method of forming same
US-11355620-B2 · Jun 7, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 42 |
| Inventec Pudong Tech Corp | 4 |
| Inventec Corp | 4 |
| Penn State Res Found | 2 |
| Novatek Microelectronics Corp | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/024 | 38 |
| H10D30/797 | 33 |
| H10D30/62 | 32 |
| H01L29/66795 | 32 |
| H10D84/0158 | 25 |