Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-2026011529-A1 · Jan 8, 2026 · US
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Lam Stephen patents
Lam Stephen is listed as an inventor on 93 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lam Stephen |
| Total patents | 93 |
| First publication | Sep 24, 2015 |
| Latest publication | Jan 8, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-12431333-B2 · Sep 30, 2025 · US
Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-2024304414-A1 · Sep 12, 2024 · US
Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-12020897-B2 · Jun 25, 2024 · US
Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-2023282444-A1 · Sep 7, 2023 · US
Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-11605526-B2 · Mar 14, 2023 · US
Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-2022336187-A1 · Oct 20, 2022 · US
Methods for aligning a particle beam and performing a non-contact electrical measurement on a cell using a registration cell
US-11328899-B2 · May 10, 2022 · US
IC with test structures and e-beam pads embedded within a contiguous standard cell area
US-11107804-B1 · Aug 31, 2021 · US
IC with test structures and e-beam pads embedded within a contiguous standard cell area
US-11081476-B1 · Aug 3, 2021 · US
Recent patents
Latest publications not already listed above.
IC with test structures and e-beam pads embedded within a contiguous standard cell area
US-11081477-B1 · Aug 3, 2021 · US
IC with test structures and E-beam pads embedded within a contiguous standard cell area
US-11075194-B1 · Jul 27, 2021 · US
IC with test structures and e-beam pads embedded within a contiguous standard cell area
US-11018126-B1 · May 25, 2021 · US
IC with test structures and E-beam pads embedded within a contiguous standard cell area
US-10978438-B1 · Apr 13, 2021 · US
Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell
US-2021098229-A1 · Apr 1, 2021 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas
US-10854522-B1 · Dec 1, 2020 · US
IC with test structures embedded within a contiguous standard cell area
US-10777472-B1 · Sep 15, 2020 · US
Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US-10593604-B1 · Mar 17, 2020 · US
Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage
US-10290552-B1 · May 14, 2019 · US
Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cells
US-10269786-B1 · Apr 23, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas
US-10211112-B1 · Feb 19, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side sort, and corner short test areas
US-10211111-B1 · Feb 19, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas
US-10199289-B1 · Feb 5, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage
US-10199294-B1 · Feb 5, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areas
US-10199287-B1 · Feb 5, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas
US-10199284-B1 · Feb 5, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakages, and at least one via respective tip-to-tip short, side-to-side short, and via open test areas
US-10199285-B1 · Feb 5, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas
US-10199286-B1 · Feb 5, 2019 · US
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage
US-10199290-B1 · Feb 5, 2019 · US
Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US-10199283-B1 · Feb 5, 2019 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Pdf Solutions Inc | 93 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P74/277 | 82 |
| G06F30/392 | 80 |
| H10P74/23 | 80 |
| H10D89/10 | 80 |
| G06F30/398 | 80 |