Structure and method using a single crystalline bixbyite oxide layer in a orientation
US-12382690-B2 · Aug 5, 2025 · US
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Dargis Rytis patents
Dargis Rytis is listed as an inventor on 34 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Dargis Rytis |
| Total patents | 34 |
| First publication | May 18, 2017 |
| Latest publication | Aug 5, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor
US-11757008-B2 · Sep 12, 2023 · US
Layered structure
US-2022359668-A1 · Nov 10, 2022 · US
Integrated epitaxial metal electrodes
US-11495670-B2 · Nov 8, 2022 · US
A pnictide nanocomposite structure for lattice stabilization
US-2022102504-A1 · Mar 31, 2022 · US
Pnictide nanocomposite structure for lattice stabilization
US-11133389-B2 · Sep 28, 2021 · US
III-N to rare earth transition in a semiconductor structure
US-11063114-B2 · Jul 13, 2021 · US
Epitaxial metal oxide as buffer for epitaxial III-V layers
US-10923345-B2 · Feb 16, 2021 · US
Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor
US-2021005720-A1 · Jan 7, 2021 · US
Integrated epitaxial metal electrodes for modified devices
US-2020388489-A1 · Dec 10, 2020 · US
Recent patents
Latest publications not already listed above.
Integrated epitaxial metal electrodes
US-10825912-B2 · Nov 3, 2020 · US
Pnictide Nanocomposite Structure for Lattice Stabilization
US-2020266276-A1 · Aug 20, 2020 · US
Epitaxial metal oxide as buffer for epitaxial iii-v layers
US-2020168454-A1 · May 28, 2020 · US
Iii-n to rare earth transition in a semiconductor structure
US-2020161417-A1 · May 21, 2020 · US
Pnictide buffer structures and devices for GaN base applications
US-10615141-B2 · Apr 7, 2020 · US
Re-based integrated photonic and electronic layered structures
US-10605987-B2 · Mar 31, 2020 · US
Epitaxial AIN/cREO structure for RF filter applications
US-10573686-B2 · Feb 25, 2020 · US
Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
US-10566944-B2 · Feb 18, 2020 · US
EPITAXIAL AIN/cREO STRUCTURE FOR RF FILTER APPLICATIONS
US-2019305039-A1 · Oct 3, 2019 · US
Metal electrode with tunable work functions
US-10418457-B2 · Sep 17, 2019 · US
RE-based Integrated Photonic and Electronic Layered Structures
US-2019227233-A1 · Jul 25, 2019 · US
Rare earth pnictides for strain management
US-10332857-B2 · Jun 25, 2019 · US
Integrated Epitaxial Metal Electrodes
US-2019172923-A1 · Jun 6, 2019 · US
Pnictide Buffer Structures and Devices for GaN Base Applications
US-2019139761-A1 · May 9, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Integrated Epitaxial Metal Electrodes
US-2019074365-A1 · Mar 7, 2019 · US
Metal Electrode With Tunable Work Functions
US-2019027574-A1 · Jan 24, 2019 · US
Layer structures for rf filters fabricated using rare earth oxides and epitaxial aluminum nitride
US-2019028081-A1 · Jan 24, 2019 · US
Integrated epitaxial metal electrodes
US-10128350-B2 · Nov 13, 2018 · US
Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
US-10075143-B2 · Sep 11, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Iqe Plc | 35 |
| Dargis Rytis | 1 |
| Clark Andrew | 1 |
| Lebby Michael | 1 |
| Pelzel Rodney | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P14/2905 | 26 |
| H10P14/3234 | 23 |
| H10P14/3248 | 19 |
| H10P14/3251 | 19 |
| H10P14/3241 | 18 |