Pnictide nanocomposite structure for lattice stabilization

Patent metadata

Field	Value
Publication number	US-11133389-B2
Application number	US-202016782296-A
Country	US
Kind code	B2
Filing date	Feb 5, 2020
Priority date	Feb 15, 2019
Publication date	Sep 28, 2021
Grant date	Sep 28, 2021

Abstract

A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.

First claim

What is claimed is:

1. A layered structure comprising:
a substrate;
a distortion layer having a first lattice constant and being epitaxially grown over the substrate, wherein the distortion layer comprises a plurality of nanocomposites that modify the first lattice constant of the distortion layer; and
a stabilization layer having a second lattice constant and being epitaxially grown over the distortion layer, wherein a second lattice constant of the stabilization layer is lattice matched to the first lattice constant modified by the plurality of nanocomposites of the distortion layer,
wherein the plurality of nanocomposites comprises a first species of nanocomposites and a second species of nanocomposites different from the first species of nanocomposites.

2. The layered structure of claim 1 , wherein:
the plurality of nanocomposites form a plurality of pockets in the distortion layer, and
each pocket of the plurality of pockets modify the first lattice constant in a respective local region of the distortion layer.

3. The layered structure of claim 1 , wherein the plurality of nanocomposites comprises RE pnictide.

4. The layered structure of claim 1 , wherein the stabilization layer has a homogenous crystal structure.

5. The layered structure of claim 1 , wherein the stabilization layer comprises III-V semiconductors.

6. The layered structure of claim 5 , wherein the III-V semiconductors in the stabilization layer comprise a III-V alloy.

7. The layered structure of claim 6 , wherein the III-V alloy is a In x Ga y Al z As n P m alloy.

8. The layered structure of claim 1 , further comprising a semiconductor layer epitaxially grown over the stabilization layer.

9. The layered structure of claim 8 , wherein the semiconductor layer comprises a Group III element and a Group V element.

10. The layered structure of claim 1 , wherein the substrate comprises GaAs.

11. The layered structure of claim 1 , wherein the distortion layer comprises a shared element with the substrate.

12. The layered structure of claim 1 , wherein the distortion layer and the stabilization layer form a unit.

13. The layered structure of claim 12 , further comprising a stack, wherein the stack comprises up to 40 units of the distortion layer and the stabilization layer.

14. The layered structure of claim 13 , wherein the stack comprises nanocomposites of varying elements, sizes, and densities.

15. The layered structure of claim 1 , wherein the distortion layer comprises Group III elements and a Group V element.

16. The layered structure of claim 1 , further comprising a dislocation filter over the stabilization layer.

17. The layered structure of claim 1 , wherein the distortion layer has a sheet resistivity of greater than 25,000 ohm-cm.

18. A layered structure comprising:
a substrate;
a first semiconductor layer epitaxially grown over the substrate;
a dislocation filter epitaxially grown over the first semiconductor layer; and
a second semiconductor layer epitaxially grown over the dislocation filter,
wherein the dislocation filter comprises a plurality of nanocomposites, and
wherein the plurality of nanocomposites comprises a first species of nanocomposites and a second species of nanocomposites different from the first species of nanocomposites.

Assignees

• Iqe Plc

Inventors

• Clark Andrew
• Pelzel Rodney
• Debnath Mukul
• Dargis Rytis
• Yanka Robert

Classifications

• H10P14/3418

  Phosphides · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title