Parasitic capacitance reduction in GaN-on-silicon devices
US-12266523-B2 · Apr 1, 2025 · US
This page is not indexed by search engines while we improve data quality.
Cueva Gabriel R patents
Cueva Gabriel R is listed as an inventor on 11 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Cueva Gabriel R |
| Total patents | 11 |
| First publication | Jan 23, 2018 |
| Latest publication | Apr 1, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
US-2024420995-A1 · Dec 19, 2024 · US
Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
US-12112983-B2 · Oct 8, 2024 · US
Parasitic capacitance reduction in gan-on-silicon devices
US-2024178220-A1 · May 30, 2024 · US
Parasitic capacitance reduction in GaN devices
US-11929364-B2 · Mar 12, 2024 · US
Suppression of parasitic acoustic waves in integrated circuit devices
US-2023216471-A1 · Jul 6, 2023 · US
Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
US-2022068708-A1 · Mar 3, 2022 · US
Parasitic capacitance reduction in gan-on-silicon devices
US-2022005764-A1 · Jan 6, 2022 · US
Parasitic capacitance reduction in GaN-on-silicon devices
US-11158575-B2 · Oct 26, 2021 · US
PARASITIC CAPACITANCE REDUCTION IN GaN-ON-SILICON DEVICES
US-2019371729-A1 · Dec 5, 2019 · US
Recent patents
Latest publications not already listed above.
Transistor with hole barrier layer
US-9876082-B2 · Jan 23, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Macom Tech Solutions Holdings Inc | 11 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 10 |
| H01L29/2003 | 9 |
| H10W10/01 | 7 |
| H10W10/00 | 7 |
| H10P14/2905 | 6 |