Electron-tunneling or hopping based aerial viral detector
US-2024418720-A1 · Dec 19, 2024 · US
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Berry Vikas patents
Berry Vikas is listed as an inventor on 18 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Berry Vikas |
| Total patents | 18 |
| First publication | Jan 22, 2015 |
| Latest publication | Dec 19, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Optical covid-19 detection system
US-2022299506-A1 · Sep 22, 2022 · US
Direct formation of hexagonal boron nitride on silicon based dielectrics
US-11289577-B2 · Mar 29, 2022 · US
Direct formation of hexagonal boron nitride on silicon based dielectrics
US-11276759-B2 · Mar 15, 2022 · US
Direct formation of hexagonal boron nitride on silicon based dielectrics
US-10658472-B2 · May 19, 2020 · US
Boron-Nitride Nanotube Membranes
US-2020147559-A1 · May 14, 2020 · US
Direct formation of hexagonal boron nitride on silicon based dielectrics
US-2020152744-A1 · May 14, 2020 · US
Direct formation of hexagonal boron nitride on silicon based dielectrics
US-2020152745-A1 · May 14, 2020 · US
Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
US-10573517-B2 · Feb 25, 2020 · US
Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
US-2019139762-A1 · May 9, 2019 · US
Recent patents
Latest publications not already listed above.
Direct formation of hexagonal boron nitride on silicon based dielectrics
US-2019097000-A1 · Mar 28, 2019 · US
Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
US-2018315599-A1 · Nov 1, 2018 · US
Direct formation of graphene on semiconductor substrates and structures prepared thereby
US-2016233305-A1 · Aug 11, 2016 · US
Direct and sequential formation of monolayers of boron nitride and graphene on substrates
US-9355842-B2 · May 31, 2016 · US
Direct formation of graphene on semiconductor substrates
US-9343533-B2 · May 17, 2016 · US
Direct and sequential formation of monolayers of boron nitride and graphene on substrates
US-2015144881-A1 · May 28, 2015 · US
Direct and sequential formation of monolayers of boron nitride and graphene on substrates
US-9029228-B2 · May 12, 2015 · US
Direct formation of graphene on semiconductor substrates
US-2015021554-A1 · Jan 22, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Globalwafers Co Ltd | 7 |
| Univ Kansas State | 6 |
| Board Of Trustees Of The Univ Of Illinois | 6 |
| Sunedison Semiconductor Ltd Uen201334164H | 5 |
| Univ Illinois | 4 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P14/3248 | 15 |
| H10P14/3238 | 15 |
| H10P14/2905 | 15 |
| H10P14/24 | 15 |
| H10P14/3406 | 15 |