Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device
US-12183379-B2 · Dec 31, 2024 · US
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Patent family 74260527
This patent family groups 6 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 74260527 |
| Family type | — |
| Earliest priority | Jul 31, 2019 |
| First filing country | US |
| Member publications | 6 |
| Countries | US |
| Representative publication | US12183379B2 — Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device |
Representative publication
Best representative member for this family based on priority and filing country.
US12183379B2 — Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device (published Dec 31, 2024)
Member publications
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