Fin field effect transistor having airgap and method for manufacturing the same
US-12165925-B2 · Dec 10, 2024 · US
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Patent family 69229744
This patent family groups 8 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 69229744 |
| Family type | — |
| Earliest priority | Jul 31, 2018 |
| First filing country | US |
| Member publications | 8 |
| Countries | US |
| Representative publication | US12165925B2 — Fin field effect transistor having airgap and method for manufacturing the same |
Representative publication
Best representative member for this family based on priority and filing country.
US12165925B2 — Fin field effect transistor having airgap and method for manufacturing the same (published Dec 10, 2024)
Member publications
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