Vertical field effect transistor with abrupt extensions at a bottom source/drain structure
US-9991382-B1 · Jun 5, 2018 · US
This page is not indexed by search engines while we improve data quality.
Patent family 61952319
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 61952319 |
| Family type | — |
| Earliest priority | Apr 20, 2017 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US9991382B1 — Vertical field effect transistor with abrupt extensions at a bottom source/drain structure |
Representative publication
Best representative member for this family based on priority and filing country.
US9991382B1 — Vertical field effect transistor with abrupt extensions at a bottom source/drain structure (published Jun 5, 2018)
Member publications
Related publications in this family.