Vertical field effect transistor with abrupt extensions at a bottom source/drain structure

Patent metadata

Field	Value
Publication number	US-9954102-B1
Application number	US-201715492797-A
Country	US
Kind code	B1
Filing date	Apr 20, 2017
Priority date	Apr 20, 2017
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A semiconductor structure is provided that includes a vertical transport field effect transistor located on sidewall surfaces of a semiconductor fin. The semiconductor structure further includes an abrupt junction that is located between a bottom source/drain extension region and a sidewall surface of a lower portion of the semiconductor fin. The bottom source/drain extension region is present in a gap that is located adjacent the lower portion of the semiconductor fin and atop a mesa portion of a base semiconductor substrate.

First claim

What is claimed is:

1. A semiconductor structure comprising:
a base semiconductor substrate including a mesa portion;
a semiconductor fin extending upwards from a surface of the mesa portion, wherein the semiconductor fin has a width that is less than a width of the mesa portion;
a bottom source/drain structure including a bottom source/drain extension region located on physically exposed surfaces of the base semiconductor substrate and the mesa portion, wherein the bottom source/drain extension region contacts sidewall surfaces of a lower portion of the semiconductor fin and wherein an abrupt junction is present at an interface formed between the bottom source/drain extension region and the sidewall surfaces of the lower portion of the semiconductor fin;
a gate structure located along a portion of the sidewall surfaces of the semiconductor fin and separated from the bottom source/drain structure and the bottom source/drain extension region by a bottom spacer;
a top spacer located on the gate structure and contacting the sidewall surfaces of an upper portion of the semiconductor fin; and
a top source/drain structure located on a topmost surface of the semiconductor fin.

2. The semiconductor structure of claim 1 , wherein the base semiconductor substrate, the mesa portion and the semiconductor fin are of uniform construction and are composed of a same semiconductor material.

3. The semiconductor structure of claim 1 , further comprising a first middle-of-the-line (MOL) dielectric material contacting sidewall surfaces of the bottom spacer, the gate structure and the top spacer, wherein the first MOL dielectric material has a topmost surface that is coplanar with a topmost surface of the top spacer.

4. The semiconductor structure of claim 3 , further comprising a second middle-of-the-line (MOL) dielectric material located atop the first MOL dielectric material, wherein the second MOL dielectric material includes a metal or metal alloy contact structure embedded therein that is in direct contact with physically exposed surfaces of the top source/drain structure.

5. The semiconductor structure of claim 1 , wherein the top source/drain structure is diamond-shaped.

6. The semiconductor structure of claim 1 , wherein the gate structure comprises a gate dielectric and a gate conductor, wherein a vertical portion of the gate dielectric is in direct physical contact with the sidewall surfaces of the semiconductor fin.

7. The semiconductor structure of claim 6 , further comprising a workfunction metal positioned between the gate dielectric and the gate conductor.

8. The semiconductor structure of claim 1 , wherein the base semiconductor substrate further includes at least one other mesa portion, wherein the at least one other mesa portion includes another semiconductor fin extending upward therefrom, wherein the another semiconductor fin has a width that is less than a width of the at least one other mesa portion.

9. The semiconductor structure of claim 8 , further comprising another bottom source/drain structure including another bottom source/drain extension region located on exposed surfaces of the base semiconductor substrate and the at least one other mesa portion, wherein the another bottom source/drain extension region contacts sidewall surfaces of a lower portion of the another semiconductor fin, another gate structure located along a portion of the sidewall surfaces of the another semiconductor fin, and separated from the another bottom source/drain structure and the another bottom source/drain extension region by another bottom spacer, another top spacer located on the another gate structure and contacting sidewall surfaces of an upper portion of the other semiconductor fin, and another top source/drain structure located on a topmost surface of the other semiconductor fin.

10. The semiconductor structure of claim 9 , wherein the gate structure provides a vertical transistor of a first conductivity type, and the another gate structure provides a vertical transistor of a second conductivity type that differs from the first conductivity type.

Assignees

• IBM

Inventors

• Mochizuki Shogo
• Reznicek Alexander

Classifications

• H01L29/0847

  Electricity · mapped topic

• H01L29/7827 Primary

  Electricity · mapped topic

• H01L29/66666

  Electricity · mapped topic

• H01L29/6653

  Electricity · mapped topic

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title