Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same
US-10096707-B2 · Oct 9, 2018 · US
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Patent family 57016293
This patent family groups 4 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 57016293 |
| Family type | — |
| Earliest priority | Apr 3, 2015 |
| First filing country | US |
| Member publications | 4 |
| Countries | US |
| Representative publication | US10096707B2 — Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same |
Representative publication
Best representative member for this family based on priority and filing country.
US10096707B2 — Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same (published Oct 9, 2018)
Member publications
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Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same
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