P-type metal oxide semiconductor material and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9224599-B2
Application number	US-201414576401-A
Country	US
Kind code	B2
Filing date	Dec 19, 2014
Priority date	Dec 31, 2013
Publication date	Dec 29, 2015
Grant date	Dec 29, 2015

Abstract

A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of
In (1−3) Ga (1−b) Zn (1+a+b) O 4 , wherein 0≦a≦0.1, 0≦b≦0.1, and 0<a+b≦0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×10 11 cm −3 and 5×10 18 cm −3 .

First claim

What is claimed is:

1. A P-type metal oxide semiconductor material having a formula of:
In (1−a) Ga (1−b) Zn (1+a+b) O 4
wherein 0≦a≦0.1, 0≦b≦0.1, and 0<a+b≦0.16, and wherein the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×10 11 cm −3 and 5×10 18 cm −3 .

2. The P-type metal oxide semiconductor material as claimed in claim 1 , wherein 0<a≦0.1, and b=0.

3. The P-type metal oxide semiconductor material as claimed in claim 1 , wherein 0<b≦0.1, and a=0.

4. A method for fabricating a P-type metal oxide semiconductor material, comprising:
adding an indium salt, a gallium salt, and a zinc salt into a solvent, obtaining a mixture;
adding a chelating agent into the mixture, forming an indium-gallium-zinc—containing metal complex; and
subjecting the metal complex to a thermal treatment to form P-type metal oxide semiconductor material, wherein the P-type metal oxide semiconductor material has a formula of:
In (1−a) Ga (1−b) Zn (1+a+b) O 4 wherein, 0≦a≦0.1, 0≦b≦0.1, and 0<a+b≦0.16.

5. The method for fabricating a P-type metal oxide semiconductor material as claimed in claim 4 , wherein the molar ratio of indium to zinc is between 0.9:1.1 and 1:1.001 in the mixture.

6. The method for fabricating at P-type metal oxide semiconductor material as claimed in claim 4 , wherein, the molar ratio of gallium to zinc is between 0.9:1.1 and 1:1.001 in the mixture.

7. The method for fabricating a P-type metal oxide semiconductor material as claimed in claim 4 , wherein the indium salt comprises indium sulfate, indium chloride, indium nitrate, indium hydroxide, indium citrate, indium acetate, indium acetylacetonate, or a combination thereof.

8. The method for fabricating a P-type metal oxide semiconductor material as claimed in claim 4 , wherein the a gallium salt comprises gallium sulfate, gallium chloride, gallium nitrate, gallium hydroxide, gallium citrate, gallium acetate, gallium acetylacetonate, or a combination thereof.

9. The method for fabricating a P-type metal oxide semiconductor material as claimed in claim 4 , wherein the zinc salt comprises zinc sulfate, zinc chloride, zinc nitrate, zinc hydroxide, zinc citrate, zinc acetate, zinc acetylacetonate, or a combination thereof.

10. The method for fabricating a P-type metal oxide semiconductor material as claimed in claim 4 , wherein the chelating agent comprises tartaric acid, citric acid, malic acid, glycolic acid, gluconic acid, heptogluconic acid, ethylenediaminetetraacetic acid, diethylenetriaminetetraacetic acid, or a combination thereof.

11. The method for fabricating a P-type metal oxide semiconductor material as claimed in claim 4 , wherein the thermal treatment is a sintering process.

12. The method for fabricating a P-type metal oxide semiconductor material claimed in claim 4 , further comprising:
performing a ceramic process to manufacture bulks or targets of the P-type metal oxide semiconductor material.

13. The method for fabricating a P-type metal oxide semiconductor material as claimed in claim 12 , wherein the ceramic process comprises a compression molding, injection molding, cold isostatic press, or slip casting.

Assignees

• Ind Tech Res Inst

Inventors

• Chiou Shan-Haw
• Chou Tzu-Chi
• Huang Chiung-Hui
• Hsieh Yu-Tzu

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/3444 Primary

  P-type · CPC title