Embedded tungsten resistor

Patent metadata

Field	Value
Publication number	US-9184226-B2
Application number	US-201213586672-A
Country	US
Kind code	B2
Filing date	Aug 15, 2012
Priority date	Aug 15, 2011
Publication date	Nov 10, 2015
Grant date	Nov 10, 2015

Abstract

A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

First claim

What is claimed is:

1. An integrated circuit, comprising:
a well;
a silicide active geometry in said well where said silicide active geometry forms a Schottky diode to said well;
a tungsten resistor formed on said silicide active geometry;
two parallel polysilicon leads whose length is equal to or greater than a body of said tungsten resistor; and
sidewall dielectric on vertical sidewalls of said parallel polysilicon leads;
where said body of said tungsten resistor lies between said parallel polysilicon leads, where a width of said tungsten resistor is defined by a spacing between said parallel polysilicon leads and where said sidewall dielectric prevents said tungsten resistor from shorting to said parallel polysilicon leads.

2. The integrated circuit of claim 1 where said well is an nwell and where said silicide is titanium silicide, cobalt silicide, or nickel silicide.

3. The integrated circuit of claim 1 where said well is an isolated pwell and where said silicide is titanium silicide, cobalt silicide, or nickel silicide.

4. The integrated circuit of claim 1 , wherein said Schottky diode is reversed biased.

5. The integrated circuit of claim 1 , further comprising:
a contact etch stop liner on a surface of said integrated circuit and between said two parallel polysilicon leads to form a bottom of a resistor trench;
where the two parallel polysilicon leads are on a surface of said integrated circuit.

6. The integrated circuit of claim 1 , further comprising:
a polysilicon platform of a surface of said integrated circuit where silicide is blocked from forming on said polysilicon platform; and
a second tungsten resistor formed on said polysilicon platform.

7. The integrated circuit of claim 6 where said polysilicon platform is formed on a dielectric.

8. An integrated circuit, comprising:
a semiconductor wafer containing said integrated circuit processed through at least on level of interconnect;
a first dielectric layer;
a lower interconnect geometry formed in said first dielectric layer;
a second dielectric layer formed on said first dielectric layer and on said lower interconnect geometry;
a tungsten via plug formed in said second dielectric layer in contact with said lower interconnect geometry;
a tungsten resistor formed over said first dielectric layer and formed in said second dielectric layer;
a third dielectric layer formed on said second dielectric layer and on said tungsten via plug and on said tungsten resistor;
a first upper interconnect geometry formed over and in contact with said via plug;
a second interconnect geometry in contact with a first head of said tungsten resistor; and
a third interconnect geometry in contact with a second head of said tungsten resistor.

9. The integrated circuit of claim 8 where said second interconnect geometry and said third interconnect geometry are lower interconnect geometries and contact said first and said second heads of said tungsten resistor from below.

10. The integrated circuit of claim 8 where said second interconnect geometry and said third interconnect geometry are upper interconnect geometries and contact said first and said second heads of said tungsten resistor from above.

Assignees

• Mcmullan Russell Carlton
• Pushkarakshan Binu Kamblath
• Narayan Subramanian J
• Sankaran Swaminathan
• Kunz Keith Edmund
• Texas Instruments Inc

Inventors

• Mcmullan Russell Carlton
• Pushkarakshan Binu Kamblath
• Narayan Subramanian J
• Sankaran Swaminathan
• Kunz Keith Edmund

Classifications

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D84/209

  of only resistors · CPC title

• H10D8/605

  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS] · CPC title

• H10D8/051

  of Schottky diodes · CPC title

• H10D1/474 Primary

  comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides · CPC title