Three-dimensional memory and operating method thereof
US-12592284-B2 · Mar 31, 2026 · US
comprising memory cells having thyristors
comprising memory cells having thyristors · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B99/20 |
| Official title | {comprising memory cells having thyristors} |
| Display label | comprising memory cells having thyristors |
| Total patents | 40 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly growing.
| Year | Patents |
|---|---|
| 2015 | 7 |
| 2016 | 6 |
| 2017 | 3 |
| 2018 | 2 |
| 2019 | 2 |
| 2020 | 2 |
| 2021 | 4 |
| 2023 | 2 |
| 2024 | 4 |
| 2025 | 5 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Memory device based on thyristors
US-12581666-B2 · Mar 17, 2026 · US
Three-dimensional memory and operating method thereof
US-2026051352-A1 · Feb 19, 2026 · US
Memory structure with three transistors
US-12484211-B2 · Nov 25, 2025 · US
Semiconductor device and method for manufacturing the same
US-2025169053-A1 · May 22, 2025 · US
Memory device using semiconductor element
US-12302548-B2 · May 13, 2025 · US
Memory structure and method for operating the same
US-12277965-B2 · Apr 15, 2025 · US
Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory array
US-2025014627-A1 · Jan 9, 2025 · US
Memory device based on thyristors
US-2024407181-A1 · Dec 5, 2024 · US
Semiconductor device including memory cell including thyristor and method of manufacturing the same
US-2024276741-A1 · Aug 15, 2024 · US
Memory structure and method for operating the same
US-2024242759-A1 · Jul 18, 2024 · US
Memory structure
US-2024008249-A1 · Jan 4, 2024 · US
Memory device using semiconductor element
US-2023115447-A1 · Apr 13, 2023 · US
Semiconductor memory device
US-11621264-B2 · Apr 4, 2023 · US
Methods of forming a thyristor-based random access memory using fin structures and elevated layers
US-11094696-B2 · Aug 17, 2021 · US
Semiconductor memory device
US-2021225842-A1 · Jul 22, 2021 · US
Semiconductor device having three-dimensional structure and method of manufacturing the same
US-11056485-B2 · Jul 6, 2021 · US
Gated thyristors
US-2021013208-A1 · Jan 14, 2021 · US
Thyristors
US-2020202918-A1 · Jun 25, 2020 · US
Semiconductor device having three-dimensional structure and method of manufacturing the same
US-2020194426-A1 · Jun 18, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B99/20?
- CPC H10B99/20 is the Cooperative Patent Classification code for “comprising memory cells having thyristors.”
- How many patents are filed under CPC H10B99/20 (comprising memory cells having thyristors)?
- Our database includes 40 publications tagged with this CPC code.
- Is patent activity under CPC H10B99/20 growing?
- Publication counts under this code: 4 in 2024 vs 5 in 2025 (latest complete years).