Memory device and memory unit
US-2015349025-A1 · Dec 3, 2015 · US
the switching components having a common active material layer
the switching components having a common active material layer · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B63/82 |
| Official title | {the switching components having a common active material layer} |
| Display label | the switching components having a common active material layer |
| Total patents | 555 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 77 |
| 2016 | 58 |
| 2017 | 55 |
| 2018 | 42 |
| 2019 | 48 |
| 2020 | 51 |
| 2021 | 55 |
| 2022 | 43 |
| 2023 | 43 |
| 2024 | 37 |
| 2025 | 39 |
| 2026 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Resistance random access memory device
US-9202846-B2 · Dec 1, 2015 · US
Switching element and method for fabricating semiconductor switching device
US-2015340606-A1 · Nov 26, 2015 · US
Method for fabricating an electronic device with anti-oxidation layers
US-9196659-B2 · Nov 24, 2015 · US
Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same
US-2015333256-A1 · Nov 19, 2015 · US
Memory devices and formation methods
US-9190265-B2 · Nov 17, 2015 · US
Semiconductor device and operation method for same
US-2015318473-A1 · Nov 5, 2015 · US
Storage device and storage unit
US-2015318471-A1 · Nov 5, 2015 · US
Resistive random access memory cells having shared electrodes with transistor devices
US-9178000-B1 · Nov 3, 2015 · US
Resistive Random Access Memory Cells Having Shared Electrodes with Transistor Devices
US-2015311257-A1 · Oct 29, 2015 · US
Memristors with asymmetric electrodes
US-9171613-B2 · Oct 27, 2015 · US
Conductive bridging memory device and method for manufacturing same
US-9166157-B2 · Oct 20, 2015 · US
Silicon based nanoscale crossbar memory
US-9159416-B2 · Oct 13, 2015 · US
Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same
US-9136470-B2 · Sep 15, 2015 · US
Three-dimensional semiconductor memory devices having double cross point array and methods of fabricating the same
US-9129830-B2 · Sep 8, 2015 · US
Method of manufacturing a nonvolatile memory device having a variable resistance element whose resistance value changes reversibly upon application of an electric pulse
US-9130167-B2 · Sep 8, 2015 · US
Three dimensional resistive memory
US-9123640-B2 · Sep 1, 2015 · US
Manufacturing method of a memory device with a reversible variable-resistance memory layer between electrodes extending along intersecting directions
US-9118005-B2 · Aug 25, 2015 · US
Variable resistance memory device and method of fabricating the same
US-9118010-B2 · Aug 25, 2015 · US
Semiconductor device and method of fabricating the same
US-2015228896-A1 · Aug 13, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B63/82?
- CPC H10B63/82 is the Cooperative Patent Classification code for “the switching components having a common active material layer.”
- How many patents are filed under CPC H10B63/82 (the switching components having a common active material layer)?
- Our database includes 555 publications tagged with this CPC code.
- Is patent activity under CPC H10B63/82 growing?
- Publication counts under this code: 37 in 2024 vs 39 in 2025 (latest complete years).