Firmware interface with durable memory storage
US-2015370302-A1 · Dec 24, 2015 · US
US9153333B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9153333-B2 |
| Application number | US-201414307424-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 17, 2014 |
| Priority date | Oct 24, 2007 |
| Publication date | Oct 6, 2015 |
| Grant date | Oct 6, 2015 |
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Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
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That which is claimed is: 1. A method of operating a semiconductor storage device comprising a plurality of memory cells connected in series and each having a floating body for storing, reading and writing data as volatile memory, and a floating gate or trapping layer above said floating body for storing data as non-volatile memory, the method comprising: transferring the data stored in the floating bodies, by a parallel, non-algorithmic process, to the floating gates or trapping…
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