Semiconductor integrated circuit device having reservoir capacitor and method of manufacturing the same
US-2015357377-A1 · Dec 10, 2015 · US
US9178012B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178012-B2 |
| Application number | US-201414174887-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 7, 2014 |
| Priority date | Oct 10, 2011 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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A method and structure is directed to eDRAM cells with high-conductance electrodes. The method includes forming upper layers on a semiconductor substrate and forming an opening in the upper layers. The method further includes forming a trench in the semiconductor substrate, aligned with the opening. The method further includes forming a metal plate on all exposed surface in the trench by applying a metallic aqueous solution with an electrical bias to a backside of the semiconductor substrate.
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What is claimed is: 1. A structure, comprising: a semiconductor substrate; a trench in the semiconductor substrate and in alignment with an opening in a plurality of upper layers covering the semiconductor substrate; a conformal metal plate lining exposed surfaces of the trench; a dielectric liner on the conformal metal plate; a metal inner electrode on the dielectric liner; a contact in contact with the metal inner electrode; and an oxide cap within the opening and on…
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