Semiconductor laser device and manufacturing method of the same

Patent metadata

Field	Value
Publication number	US-9800021-B2
Application number	US-201514696102-A
Country	US
Kind code	B2
Filing date	Apr 24, 2015
Priority date	Apr 25, 2014
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor laser device comprising steps of:
forming a first diffraction grating and a second diffraction grating continuous to the first diffraction grating on a wafer using an electron beam exposure, the first diffraction grating having a width and the second diffraction grating having a width wider than the width of the first diffraction grating;
forming an active layer above the first diffraction grating and the second diffraction grating; and
forming a mesa in a stripe shape by etching the first diffraction grating, the second diffraction grating and the active layer, the mesa in a portion thereof corresponding to the first diffraction grating having a width narrower than a width in another portion of the mesa corresponding to the second diffraction grating.

2. The method according to claim 1 , further comprising:
exposing a cleaved face by cleaving the wafer at a portion where the second diffraction grating exists.

3. The method according to claim 1 , further comprising:
forming a waveguide layer above the second diffraction grating after etching the active layer.

4. The method according to claim 1 , further comprising:
forming a modulation region above the second diffraction grating after etching the active layer.

5. A method of manufacturing a semiconductor laser device, comprising steps of:
forming a first diffraction grating and a second diffraction grating on a wafer continuously by steps of:
forming a grating layer on the wafer; and
forming a plurality of exposed regions by a continuous electron beam exposure, the exposed regions each including a first pattern and two second patterns sandwiching the first pattern therebetween, the first pattern corresponding to the first diffraction grating and having a first width and a first pitch, the second patterns corresponding to the second diffraction grating and having a second pitch different from the first pitch of the first pattern, the second pattern in one of the exposed regions being exposed to electron beams at least twice, the second pattern in the one of the exposed regions having a width greater than the first width of the first pattern in a portion continuous to the second pattern in another of the exposed regions next to the one of the exposed regions;

forming an active layer above the first diffraction grating and the second diffraction grating; and
forming a mesa stripe having a width equal to or narrower than the first width of the first pattern by etching the first diffraction grating, the second diffraction grating, and the active layer,
wherein the step of forming the first diffraction grating and the second diffraction grating includes a step of setting the second pitch of the second pattern of the second diffraction grating at least 1.05 times greater than the first pitch of the first pattern of the first diffraction grating.

6. The method according to claim 5 , further comprising a step of:
forming a waveguide layer above the second diffraction grating after etching the active layer in a portion above the second diffraction grating.

7. The method according to claim 5 ,
further comprising a step of cleaving the wafer in the second diffraction grating after the step of forming the mesa stripe.

8. A method of manufacturing a semiconductor laser device, comprising steps of:
forming a first diffraction grating and a second diffraction grating on a wafer continuously by steps of:
forming a grating layer on the wafer; and
forming a plurality of exposed regions by a continuous electron beam exposure, the exposed regions each including a first pattern and two second patterns sandwiching the first pattern therebetween, the first pattern corresponding to the first diffraction grating and having a first width and a first pitch, the second patterns corresponding to the second diffraction grating and having a second pitch different from the first pitch of the first pattern, the second pattern in one of the exposed regions being exposed to electron beams at least twice, the second pattern in the one of the exposed regions having a width greater than the first width of the first pattern in a portion continuous to the second pattern in another of the exposed regions next to the one of the exposed regions;

forming an active layer above the first diffraction grating and the second diffraction grating; and
forming a mesa stripe having a width equal to or narrower than the first width of the first pattern by etching the first diffraction grating, the second diffraction grating, and the active layer,
wherein the step of forming the first diffraction grating and the second diffraction grating includes a step of setting the second pitch of the second pattern of the second diffraction grating at most 0.95 times smaller than the first pitch of the first pattern of the first diffraction grating.

9. The method according to claim 8 , further comprising a step of:
forming a waveguide layer above the second diffraction grating after etching the active layer in a portion above the second diffraction grating.

10. The method according to claim 8 ,
further comprising a step of cleaving the wafer in the second diffraction grating after the step of forming the mesa stripe.

Assignees

• Sedi Inc

Inventors

• Ishiura Masami

Classifications

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/305

  characterised by the doping materials used in the laser structure · CPC title

• H01S5/2275 Primary

  mesa created by etching · CPC title

• H01S5/2222

  having special electric properties · CPC title

• H01S5/1231

  Grating growth or overgrowth details · CPC title