Passivation of VCSEL sidewalls

Patent metadata

Field	Value
Publication number	US-9997892-B2
Application number	US-201414467439-A
Country	US
Kind code	B2
Filing date	Aug 25, 2014
Priority date	Oct 1, 2004
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.

First claim

What is claimed is:

1. A semiconductor structure configured for use in an optical semiconductor device comprising:
an oxidizing layer comprising an oxide aperture;
a plurality of layers near the oxidizing layer comprising:
a thermal conduction layer disposed above the oxidizing layer, the thermal conduction layer including aluminum,
a mirror above the thermal conduction layer, and
a stop etch layer disposed above the oxidizing layer and below the mirror, the stop etch layer having a lower etch selectivity than the thermal conduction layer with respect to a particular etchant;

a passivation material disposed on the thermal conduction layer and the mirror, the passivation material configured to inhibit oxidation of the thermal conduction layer and the mirror; and
a bottom mirror, wherein the bottom mirror comprises a DBR mirror.

2. The semiconductor structure of claim 1 , wherein the passivation material is not disposed on the oxidizing layer allowing the oxidizing layer to be oxidized to form the oxide aperture in the oxidizing layer.

3. The semiconductor structure of claim 1 , wherein the plurality of layers above the oxidizing layer comprise one or more layers with a composition defined approximately by Al(x)Ga(1−x)As where x is approximately greater than 0.95.

4. The semiconductor structure of claim 1 , wherein the passivation material is Silicon Nitride.

5. The semiconductor structure of claim 1 , wherein the passivation material is Silicon Dioxide.

6. The semiconductor structure of claim 1 , wherein the thermal conduction layer is formed in an epitaxial structure.

7. The semiconductor structure of claim 6 further comprising a metal p-type intracavity contact disposed on the passivation material.

8. The semiconductor structure of claim 7 further comprising a top p-type conduction region, wherein the metal p-type intracavity contact is in contact with the top p-type conduction region.

9. The semiconductor structure of claim 8 , wherein the metal p-type intracavity contact is configured to retain the passivation material around the thermal conduction layer and mirror above the oxidizing layer under the p-type intracavity contact.

10. A semiconductor structure configured for use in an optical semiconductor device comprising:
an oxidizing layer comprising an oxide aperture;
a plurality of layers near the oxidizing layer comprising:
a thermal conduction layer disposed above the oxidizing layer, the thermal conduction layer including aluminum,
a mirror above the thermal conduction layer, and
a stop etch layer disposed above the oxidizing layer and below the mirror, the stop etch layer having a lower etch selectivity than the thermal conduction layer with respect to a particular etchant;

a bottom mirror, wherein the bottom mirror comprises a DBR mirror; and
a passivation material disposed on the thermal conduction layer and the mirror, the passivation material configured to inhibit oxidation of the thermal conduction layer and the mirror.

Assignees

• Finisar Corp

Inventors

• Johnson Ralph H

Classifications

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/024

  Arrangements for thermal management · CPC title

• H01S5/3054

  p-doping · CPC title

• H01S5/18341

  Intra-cavity contacts · CPC title

• H01S5/305

  characterised by the doping materials used in the laser structure · CPC title