Crystalline oxide semiconductor film and semiconductor device
US-11967618-B2 · Apr 23, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/227 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 32 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 4 |
| 2016 | 2 |
| 2017 | 9 |
| 2018 | 8 |
| 2019 | 3 |
| 2020 | 2 |
| 2021 | 1 |
| 2022 | 2 |
| 2024 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Crystalline oxide semiconductor film and semiconductor device
US-2022302263-A1 · Sep 22, 2022 · US
Crystalline oxide semiconductor film and semiconductor device
US-11393906-B2 · Jul 19, 2022 · US
Oxygen getters for activation of group v dopants in ii-vi semiconductor materials
US-2021210606-A1 · Jul 8, 2021 · US
Source and drain formation using self-aligned processes
US-10541135-B2 · Jan 21, 2020 · US
Array substrate for thin-film transistor and display device of the same
US-10529806-B2 · Jan 7, 2020 · US
Crystalline oxide semiconductor film and semiconductor device
US-2019305091-A1 · Oct 3, 2019 · US
Source and drain formation using self-aligned processes
US-2019164756-A1 · May 30, 2019 · US
Hemt having heavily doped N-type regions and process of forming the same
US-10211323-B2 · Feb 19, 2019 · US
Source and drain formation using self-aligned processes
US-10153159-B1 · Dec 11, 2018 · US
Oxide thin film transistor, array substrate and display device
US-10141449-B2 · Nov 27, 2018 · US
Active switch array substrate, manufacturing method therefor, and display panel using the same
US-2018308876-A1 · Oct 25, 2018 · US
SOI substrate and manufacturing method thereof
US-10014210-B2 · Jul 3, 2018 · US
Hemt having heavily doped n-type regions and process of forming the same
US-2018182871-A1 · Jun 28, 2018 · US
Reduction of defect induced leakage in III-V semiconductor devices
US-10002929-B2 · Jun 19, 2018 · US
Method for manufacturing transistor according to selective printing of dopant
US-9997709-B2 · Jun 12, 2018 · US
Array Substrate for Thin-Film Transistor and Display Device of the Same
US-2018097062-A1 · Apr 5, 2018 · US
Crystals of semiconductor material having a tuned band gap energy and method for preparation thereof
US-9771263-B2 · Sep 26, 2017 · US
Soi substrate and manufacturing method thereof
US-2017256616-A1 · Sep 7, 2017 · US
Soi substrate and manufacturing method thereof
US-2017256440-A1 · Sep 7, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/227?
- CPC H01L29/227 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/227 (Electricity)?
- Our database includes 32 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/227 growing?
- Publication counts under this code: 2 in 2022 vs 1 in 2024 (latest complete years).