Method for manufacturing transistor according to selective printing of dopant

Patent metadata

Field	Value
Publication number	US-9997709-B2
Application number	US-201515320750-A
Country	US
Kind code	B2
Filing date	Jul 14, 2015
Priority date	Jul 17, 2014
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

The present invention relates to a method for manufacturing a transistor according selective printing of a dopant. For the manufacture of a transistor, a semiconductor layer is formed on a substrate, and a dopant layer is formed on the semiconductor layer. In the formation of the dopant layer, an inkjet printing is used to selectively print an n type dopant or a p type dopant.

First claim

What is claimed is:

1. A method for manufacturing a transistor according to selective printing of a dopant, the method comprising:
forming a semiconductor layer on a substrate for manufacture of a transistor; and
forming a dopant layer on the semiconductor layer,
wherein the formation of the dopant layer includes selectively printing an n type dopant or a p type dopant by inkjet printing,
wherein a solvent containing the dopant dissolves a predetermined portion of the semiconductor layer and the dopant becomes a part of the semiconductor layer,
wherein the n type dopant comprises at least one selected from the group consisting of bis(ethylenedithio)-tetrathiafulvalence (BERT-TTF), tetrathianaphthacene (TTN), bis(cyclopentadienyl)-cobalt(II) (CoCp 2 ), chromium with the anion of 1,3,4,6,7,8-hexahydro-2H-pyrimidof1,2-alpyrimidine (hpp) (Cr 7 (hpp) 4 ), tungsten with the anion of 1,3,4,6,7,8-hexahydro-2H-pyrimidol1,2-alpyrimidine (hpp) (W 2 (hpp) 4 ), pyronin B chloride, acridine orange base [3,6-bis(dimethylamino)acridine (AOB)], leuco bases like leuco crystal violet (LCV), (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2yl)phenyl)dimethylamine (nDMBI), and 2-(2-methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide (o-MeO-DMBI-I),
wherein the p type dopant comprises at least one selected from the group consisting of 3,6-difluoro-2,5,7,7,8,8-hexacvanoquinodimethane (F 2 -HCNQ), molybdenum trioxide (MoO 3 ) and tungsten trioxide (WO 3 ),
wherein the n type dopant or the p type dopant is dissolved in the solvent and used in inkjet printing,
wherein the solvent comprises any one selected from the group consisting of chlorobenzene, chloroform, trichlorobenzene, tetrahydrofuran, dichlorobenzene, and dichloroethane, and
wherein the amount of the dopant contained in a portion of the semiconductor layer containing the dopant is 0.5 wt. % to 1.0 wt. %.

2. A method for manufacturing a transistor, comprising:
preparing a substrate;
forming a source/drain electrode on the substrate;
forming a semiconductor layer on the source/drain electrode;
forming a dopant layer on the semiconductor layer;
forming an insulating layer on the semiconductor layer; and
forming a gate electrode on the insulating, layer,
wherein the formation of the dopant layer is performed by selectively printing a dopant layer on the semiconductor layer by inkjet printing,
wherein a solvent containing the dopant dissolves a redetermined portion of the semiconductor layer and the dopant becomes a part of the semiconductor layer,
wherein the n type dopant comprises at least one selected from the group consisting of bis(ethylenedithio)-tetrathiafulvalence (BEDT-TTF), tetrathianaphthacene (TTN), bis(cyclopentadienyl)-cobalt(II) (CoCp 2 ), chromium with the anion of 1,3,4,6,7,8-hexahydro-2H-pyrimidof1,2-alpyrimidine (hpp) (Cr 2 (hpp) 4 ), tungsten with the anion of 1,3,4,6,7,8-hexahydro-2H-pyrimidof1,2-alpyrimidine (hpp) (W 2 (hpp) 4 ), pyronin B chloride, acridine orange base f3,6-bis(dimethylamino)acridine (AOB)], leuco bases like leuco crystal violet (LCV), (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2yl)phenyl)dimethylamine (nDMBI), and 2-(2-methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide (o-MeO-DMBI-1),
wherein the p type dopant comprises at least one selected from the group consisting of 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F 2 -HCNQ), molybdenum trioxide (MoO 3 ), and tungsten trioxide (WO 3 ),
wherein the n type dopant or the p type dopant is dissolved in the solvent and used in inkjet printing,
wherein the solvent comprises any one selected from the group consisting of chlorobenzene, chloroform, trichlorobenzene, tetrahydrofuran, dichlorobenzene, and dichloroethane, and
wherein the amount of the dopant contained in a portion of the semiconductor layer containing the dopant is 0.5 wt. % to 1.0 wt. %.

3. The method as claimed in claim 2 , wherein the semiconductor layer comprises any one selected from the group consisting of an organic semiconductor, a metal oxide semiconductor and a carbon compound semiconductor.

4. The method as claimed in claim 3 , wherein the organic semiconductor comprises any one selected from the group consisting of an amphiphillic organic semiconductor, an n type organic semiconductor and a p type organic semiconductor,
wherein the amphiphillic organic semiconductor is any one selected from the group consisting of [6,6-phenyl-C 61 -butyric acid methyl ester (PCBM), naphthalene-bis(dicarboximide)bithiophene (P(NDI 2 OD-T 2 )), poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F 8 BT), poly(9,9-dioctylfluorene) (PFO), diketopyrrolo-pyrrole-bithiophene (DPPT-TT), and poly(thienylenevinylene-cophthalimide) (PTVPhI-Eh) functionalized with dodecyl at the imide nitrogen,
wherein the n type organic semiconductor is any one selected from a substance based on acene, fully fluorinated acene, partially fluorinated acene, partially fluorinated oligothiophene, fullerene, fullerne with a substituent, fully fluorinated phthalocyanine, partially fluorinated phthalocyanine, perylene tetracarboxylic diimide, perylene tetracarboxylic dianhydride, naphthalene tetracarboxylic diimide, or naphthalene tetracarboxylic dianhydride, or a derivative thereof,
wherein the P type organic semiconductor is any one selected from a substance including acene, poly-thienylene vinylene, poly-3-hexylthiophene, alpha-hexathienylene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, rubrene, polythiophene, polyparaphenylene vinylene, polyparaphenylene, polyfluorene, polythiophene vinylene, polythiophene-heterocyclic aromatic copolymer, or triaryl amine, or a derivative thereof.

5. The method as claimed in claim 3 , wherein the metal oxide semiconductor is any one selected from the group consisting of zinc oxide (ZnO x ), indium oxide (InO x ), indium gallium zinc oxide (IGZO), and indium tin oxide (ITO).

6. The method as claimed in claim 3 , wherein the carbon compound semiconductor is selected from carbon nanotube (CNT) or graphene nano-ribbon.

Assignees

• Univ Dongguk Ind Acad Coop

Inventors

• Noh Yong Young

Classifications

• H10P95/92

  Formation of n- or p-type semiconductors, e.g. doping of graphene · CPC title

• H10P32/00

  Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00) · CPC title

• H01L29/78684

  Electricity · mapped topic

• H01L51/002 Primary

  Electricity · mapped topic

• H01L51/0558

  Electricity · mapped topic