Methods of forming SOI substrates
US-10840080-B2 · Nov 17, 2020 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02376 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 117 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 9 |
| 2017 | 6 |
| 2018 | 15 |
| 2019 | 15 |
| 2020 | 19 |
| 2021 | 13 |
| 2022 | 7 |
| 2023 | 8 |
| 2024 | 8 |
| 2025 | 4 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same
US-2020335335-A1 · Oct 22, 2020 · US
Layered substrate for microelectronic devices
US-2020258738-A1 · Aug 13, 2020 · US
Thermal absorption coating on sapphire for epitaxial process
US-10651034-B2 · May 12, 2020 · US
Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET
US-10636880-B2 · Apr 28, 2020 · US
Electric field assisted placement of nanomaterials through dielectric engineering
US-2019371603-A1 · Dec 5, 2019 · US
Semiconductor manufacturing method and semiconductor manufacturing device
US-2019362974-A1 · Nov 28, 2019 · US
III-V or II-VI compound semiconductor films on graphitic substrates
US-10472734-B2 · Nov 12, 2019 · US
Semiconductor structures and method for fabricating the same
US-10446677-B2 · Oct 15, 2019 · US
Electric field assisted placement of nanomaterials through dielectric engineering
US-10431453-B2 · Oct 1, 2019 · US
Semiconductor structures and method for fabricating the same
US-2019288099-A1 · Sep 19, 2019 · US
Sic epitaxial wafer, manufacturing apparatus of sic epitaxial wafer, fabrication method of sic epitaxial wafer, and semiconductor device
US-2019257001-A1 · Aug 22, 2019 · US
Method of fabricating electrically isolated diamond nanowires and its application for nanowire mosfet
US-2019237546-A1 · Aug 1, 2019 · US
SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
US-10323335-B2 · Jun 18, 2019 · US
Method of enhancing a dlc coated surface for enhanced multipaction resistance
US-2019181013-A1 · Jun 13, 2019 · US
Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same
US-2019164754-A1 · May 30, 2019 · US
Method for manufacturing diamond substrate
US-10253426-B2 · Apr 9, 2019 · US
Diamond substrate and freestanding diamond substrate
US-2019093253-A1 · Mar 28, 2019 · US
Nanowire device having graphene top and bottom electrodes and method of making such a device
US-10243104-B2 · Mar 26, 2019 · US
Methods of forming soi substrates
US-2019088466-A1 · Mar 21, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02376?
- CPC H01L21/02376 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02376 (Electricity)?
- Our database includes 117 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02376 growing?
- Publication counts under this code: 8 in 2024 vs 4 in 2025 (latest complete years).