Top buffer layer for magnetic tunnel junction application
US-11621393-B2 · Apr 4, 2023 · US
applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01F41/325 |
| Official title | {applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition} |
| Display label | applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition |
| Total patents | 43 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 2 |
| 2017 | 4 |
| 2018 | 4 |
| 2019 | 9 |
| 2020 | 7 |
| 2021 | 4 |
| 2022 | 2 |
| 2023 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Storage element and memory
US-2022271219-A1 · Aug 25, 2022 · US
Storage element and memory
US-11349067-B2 · May 31, 2022 · US
Hybrid oxide/metal cap layer for boron-free free layer
US-11009570-B2 · May 18, 2021 · US
Top buffer layer for magnetic tunnel junction application
US-2021119119-A1 · Apr 22, 2021 · US
Storage element and memory
US-2021083177-A1 · Mar 18, 2021 · US
Top buffer layer for magnetic tunnel junction application
US-10923652-B2 · Feb 16, 2021 · US
Top buffer layer for magnetic tunnel junction application
US-2020403152-A1 · Dec 24, 2020 · US
Storage element and memory
US-10862024-B2 · Dec 8, 2020 · US
Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US-10840436-B2 · Nov 17, 2020 · US
Magnetoresistive device comprising chromium
US-10770213-B2 · Sep 8, 2020 · US
Hybrid oxide/metal cap layer for boron-free free layer
US-2020158796-A1 · May 21, 2020 · US
Perpendicular mram free layer with nb oxide containing capping layer
US-2020066969-A1 · Feb 27, 2020 · US
Storage element and memory
US-2020052195-A1 · Feb 13, 2020 · US
Magnetic memory device
US-10516095-B2 · Dec 24, 2019 · US
Magnetoresistive device comprising chromium
US-2019348208-A1 · Nov 14, 2019 · US
Storage element and memory
US-10475989-B2 · Nov 12, 2019 · US
Perpendicular Magnetic Anisotropy Interface Tunnel Junction Devices
US-2019237664-A1 · Aug 1, 2019 · US
Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US-2019207095-A1 · Jul 4, 2019 · US
Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
US-10333058-B2 · Jun 25, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01F41/325?
- CPC H01F41/325 is the Cooperative Patent Classification code for “applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition.”
- How many patents are filed under CPC H01F41/325 (applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition)?
- Our database includes 43 publications tagged with this CPC code.
- Is patent activity under CPC H01F41/325 growing?
- Publication counts under this code: 2 in 2022 vs 1 in 2023 (latest complete years).