Configurations and techniques to increase interfacial anisotropy of magnetic tunnel junctions
US-2017200884-A1 · Jul 13, 2017 · US
Magnetic memory device
US10516095B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10516095-B2 |
| Application number | US-201815918235-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2018 |
| Priority date | Sep 21, 2017 |
| Publication date | Dec 24, 2019 |
| Grant date | Dec 24, 2019 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
According to one embodiment, a magnetic memory device includes a lower region, and a stacked structure provided on the lower region, wherein the stacked structure includes a conductive oxide layer containing boron (B), a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B), a second magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B), and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetic memory device comprising: a lower region; and a stacked structure provided on the lower region, wherein the stacked structure includes: a conductive oxide layer containing boron (B); a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B); a second magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B); and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the conductive oxide layer contains at least one element selected from transition metal elements and rare earth metal elements, and wherein the conductive oxide layer is doped with a predetermined metal element selected from niobium (Nb), tantalum (Ta), tungsten (W), lithium (Li) and indium (In). 2. The device of claim 1 , wherein the stacked structure further includes a third magnetic layer provided between the lower region and the second magnetic layer, having a fixed magnetization direction parallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd). 3. The device of claim 2 , wherein the stacked structure further includes a fourth magnetic layer provided between the lower region and the third magnetic layer, having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd). 4. The device of claim 1 , wherein: the stacked structure further includes a conductive contact layer containing at least one element selected from ruthenium (Ru) and iridium (Ir), and the conductive oxide layer is provided between the first magnetic layer and the conductive contact layer. 5. The device of claim 1 , wherein the nonmagnetic layer contains magnesium (Mg) and oxygen (O). 6. A magnetic memory device comprising: a lower region; and a stacked structure provided on the lower region, wherein the stacked structure includes: a conductive oxide layer containing boron (B); a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B); a second magnetic layer provided between the conductive oxide layer and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B); and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the conductive oxide layer contains at least one element selected from transition metal elements and rare earth metal elements, and wherein the conductive oxide layer is doped with a predetermined metal element selected from niobium (Nb), tantalum (Ta), tungsten (W), lithium (Li) and indium (In). 7. The device of claim 6 , wherein: the stacked structure further includes a third magnetic layer having a fixed magnetization direction parallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd), and the conductive oxide layer is provided between the second magnetic layer and the third magnetic layer. 8. The device of claim 7 , wherein: the stacked structure further includes a second conductive oxide layer, and the third magnetic layer is provided between the conductive oxide layer and the second conductive oxide layer. 9. The device of claim 7 , wherein: the stacked structure further includes a fourth magnetic layer having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd), and the third magnetic layer is provided between the conductive oxide layer and the fourth magnetic layer. 10. The device of claim 9 , wherein: the stacked structure further includes a second conductive oxide layer, and the fourth magnetic layer is provided between the third magnetic layer and the second conductive oxide layer. 11. The device of claim 7 , wherein the stacked structure further includes a fourth magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd). 12. The device of claim 6 , wherein the nonmagnetic layer contains magnesium (Mg) and oxygen (O).
Assignees
Inventors
Classifications
applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition · CPC title
by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title
Writing or programming circuits or methods · CPC title
- G11C11/161Primary
details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title
the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10516095B2 cover?
- According to one embodiment, a magnetic memory device includes a lower region, and a stacked structure provided on the lower region, wherein the stacked structure includes a conductive oxide layer containing boron (B), a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B), a seco…
- Who is the assignee on this patent?
- Toshiba Memory Corp
- What technology area does this patent fall under?
- Primary CPC classification G11C11/161. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 24 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).