Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture

Patent metadata

Field	Value
Publication number	US-10840436-B2
Application number	US-201715859195-A
Country	US
Kind code	B2
Filing date	Dec 29, 2017
Priority date	Dec 29, 2017
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

A Magnetic Tunnel Junction (MTJ) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.

First claim

What is claimed is:

1. A method of fabricating a Magnetic Tunnel Junction (MTJ) device comprising:
depositing a first intermediate capping layer on a MTJ formation, wherein the first intermediate capping layer includes Ruthenium (Ru);
depositing a second intermediate capping layer on the first intermediate capping layer, wherein the second intermediate capping layer includes Tantalum (Ta);
etching the second intermediate capping layer with a first etch of a two-stage etching process to remove at least a portion of the second intermediate capping layer;
etching the first intermediate capping layer to remove at least a remaining portion of the first intermediate capping layer to expose a free magnetic layer of the MTJ formation with a second etch of the two-stage etching process and etching the exposed free magnetic layer of the MTJ formation with the second etch of the two-stage etching process to smooth the surface of the free magnetic layer as deposited, wherein the first etch is faster than the second etch;
depositing a first capping layer on the exposed free magnetic layer of the MTJ formation after the second etch of the free magnetic layer, wherein the first capping layer includes Ruthenium (Ru); and
depositing a second capping layer on the first capping layer, wherein the second capping layer includes Tantalum (Ta).

2. The method of fabricating the MTJ device according to claim 1 , wherein:
the first intermediate capping layer has a deposited thickness of approximately 2-3 nanometers (nm);
the second intermediate capping layer has a deposited thickness of approximately 3-10 nm;
the first capping layer has a deposited thickness of approximately 2-3 nm; and
the second capping layer has a deposited thickness of approximately 3-10 nm.

3. The method of fabricating the MTJ device according to claim 1 , wherein:
the first and second intermediate capping layers are deposited in a first vacuum; and
the first and second intermediate capping layers and the free magnetic layer are etched and the first and second capping layers are deposited in a second vacuum.

4. The method of fabricating the MTJ device according to claim 3 , further comprising:
annealing the MTJ formation after depositing the first and second intermediate capping layers and before etching the first and second intermediate capping layers.

5. The method of fabricating the MTJ device according to claim 3 , further comprising:
depositing a Perpendicular Magnetic Anisotropy (PMA) enhancement layer in the second vacuum, wherein the PMA enhancement layer is disposed between the first capping layer and the MTJ formation.

6. The method of fabricating the MTJ device according to claim 3 , further comprising:
depositing a reference magnetic layer of the MTJ formation in the first vacuum, wherein the reference magnetic layer is disposed on a substrate;
depositing a non-magnetic tunneling barrier layer of the MTJ formation in the first vacuum, wherein the non-magnetic tunneling barrier layer is disposed on the reference magnetic layer; and
depositing a free magnetic layer of the MTJ formation in the first vacuum, wherein the free magnetic layer is disposed on the non-magnetic tunneling barrier layer.

7. The method of fabricating the MTJ device according to claim 6 , wherein:
the reference magnetic layer includes one or more of Cobalt (Co), Iron (Fe), Boron (B), Cobalt Nickel (CoNi), Cobalt Platinum (CoPt), and has a deposited thickness of approximately 1-5 nanometers (nm);
the non-magnetic tunneling barrier layer includes Magnesium (Mg) oxide, and has a deposited thickness of approximately 1-10 nm; and
the free magnetic layer includes one or more of Cobalt (Co), Iron (Fe) and Boron (B), and has a deposited thickness of approximately 1-3 nm.

8. The method of fabricating the MTJ device according to claim 6 , further comprising:
depositing a first ferromagnetic layer of a Synthetic Antiferromagnetic (SAF) formation in the first vacuum, wherein the first ferromagnetic layer is disposed on the substrate; and
depositing a first non-magnetic layer of the SAF formation in the first vacuum, wherein the first non-magnetic layer is disposed between the first ferromagnetic layer and the reference magnetic layer.

9. The method of fabricating the MTJ device according to claim 8 , wherein
the first ferromagnetic layer includes one or more of Cobalt (Co), Cobalt Nickel (CoNi) and Cobalt Platinum (CoPt), and has a deposited thickness of approximately 1-5 nm; and
the first non-magnetic layer includes Ruthenium (Ru), and has a deposited thickness of approximately 0.9 nm.

10. The method of fabricating the MTJ device according to claim 8 , further comprising:
depositing a seed layer in the first vacuum, wherein the seed layer is disposed between the substrate and the first ferromagnetic layer.

11. The method of fabricating the MTJ device according to claim 1 , wherein the MTJ device comprises a Magnetoresistive Random Access Memory (MRAM).

12. A method of fabricating a Magnetic Tunnel Junction (MTJ) device comprising:
receiving a wafer including a first intermediate capping layer disposed on a MTJ formation and a second intermediate capping layer disposed on the first intermediate capping layer, wherein the first intermediate capping layer includes Ruthenium (Ru) and the second intermediate capping layer includes Tantalum (Ta);
etching the second intermediate capping layer with a first etch of a two-stage etching process to remove at least a portion of the second intermediate capping layer;
etching the first intermediate capping layer with a second etch of the two-stage etching process to remove at least a remaining portion of the first intermediate capping layer and etching a portion of a free magnetic layer of the MTJ formation, with the second etch of the two-stage etching process to smooth the surface of the free magnetic layer as deposited, wherein the second etch is slower than the first etch and wherein the two-stage etching process exposes the surface of the free magnetic layer;
depositing a first capping layer on the exposed surface of the free magnetic layer of the MTJ formation, wherein the first capping layer includes Ruthenium (Ru);
depositing a second capping layer on the first capping layer, wherein the second capping layer includes Tantalum (Ta).

13. The method of fabricating the MTJ device according to claim 12 , further comprising:
annealing the wafer before etching the first and second intermediate capping layers.

14. The method of fabricating the MTJ device according to claim 12 , wherein:
the first intermediate capping layer has a deposited thickness of approximately 2-3 nanometers (nm);
the second intermediate capping layer has a deposited thickness of approximately 3-10 nm;
the first capping layer has a deposited thickness of approximately 2-3 nm; and
the second capping layer has a deposited thickness of approximately 3-10 nm.

15. The method of fabricating the MTJ device according to claim 12 , further comprising depositing a Perpendicular Magnetic Anisotropies (PMA) enhancement layer on the MTJ formation before depositing the first capping layer.

16. The method of fabricating the MTJ device according to claim 15 , wherein the PMA enhancement layer includes one or more of Cobalt (Co), Iron (Fe), Boron (B) and/or Tantalum Nitride (TaN) and has a thickness of approximately 0.5-2 nm.

17. The method of fabricating the MTJ device according to claim 15 , wherein the PMA enhancement layer is configured to control perpendicular magnetic anisotropy.

18. The metho

Assignees

• Spin Memory Inc

Inventors

• Kardasz Bartlomiej
• Vasquez Jorge
• Pinarbasi Mustafa

Classifications

• H10N50/85

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• H01F41/325

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• G11C11/1655

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• G11C11/161

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• H01F10/3286

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