Pressure-induced crystallization and topochemical cross-linking of conjugated polymers
US-12570808-B2 · Mar 10, 2026 · US
by pressure treatment during the growth
by pressure treatment during the growth · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B1/12 |
| Official title | by pressure treatment during the growth |
| Display label | by pressure treatment during the growth |
| Total patents | 50 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly growing.
| Year | Patents |
|---|---|
| 2015 | 2 |
| 2016 | 1 |
| 2017 | 5 |
| 2018 | 5 |
| 2019 | 4 |
| 2020 | 4 |
| 2021 | 4 |
| 2022 | 4 |
| 2023 | 5 |
| 2024 | 1 |
| 2025 | 13 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Methods for low energy inorganic material synthesis
US-2026002283-A1 · Jan 1, 2026 · US
Silicon carbide wafer and method of forming the same
US-12466019-B2 · Nov 11, 2025 · US
Continuous preparation method of large-area single-crystal (100) copper foil
US-12448699-B2 · Oct 21, 2025 · US
Methods for low energy inorganic material synthesis
US-12448700-B2 · Oct 21, 2025 · US
Continuous preparation method of large-area single-crystal (100) copper foil
US-2025290223-A1 · Sep 18, 2025 · US
Semiconductor processing method
US-2025226201-A1 · Jul 10, 2025 · US
Silicon carbide seed, silicon carbide crystal and method of fabricating the same
US-2025223723-A1 · Jul 10, 2025 · US
Processing method for boule and grinding equipment
US-2025222551-A1 · Jul 10, 2025 · US
Silicon carbide wafer and method of forming the same
US-2025223724-A1 · Jul 10, 2025 · US
Silicon carbide crystal boule and manufacturing method thereof
US-2025223722-A1 · Jul 10, 2025 · US
Luminescent diamond with negatively charged vacancies
US-2025197720-A1 · Jun 19, 2025 · US
Pressure-induced crystallization and topochemical cross-linking of conjugated polymers
US-2025197571-A1 · Jun 19, 2025 · US
Process for sythesizing spinel-coated single-crystal cathode active materials
US-2025198045-A1 · Jun 19, 2025 · US
Preparation method for ultrahigh-conductivity multilayer single-crystal laminated copper material, and copper material
US-12203193-B2 · Jan 21, 2025 · US
Method for Producing Single Crystal Diamond and Single Crystal Diamond
US-2024318348-A1 · Sep 26, 2024 · US
Facile etching for single crystal cathode materials
US-11827998-B2 · Nov 28, 2023 · US
sp2-sp3 Hybrid crystalline boron nitride and its preparation process
US-11708268-B2 · Jul 25, 2023 · US
Method for preparing sea urchin-shaped zinc oxide nanowire
US-11685665-B2 · Jun 27, 2023 · US
Methods for low energy inorganic material synthesis
US-2023115706-A1 · Apr 13, 2023 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B1/12?
- CPC C30B1/12 is the Cooperative Patent Classification code for “by pressure treatment during the growth.”
- How many patents are filed under CPC C30B1/12 (by pressure treatment during the growth)?
- Our database includes 50 publications tagged with this CPC code.
- Is patent activity under CPC C30B1/12 growing?
- Publication counts under this code: 1 in 2024 vs 13 in 2025 (latest complete years).