sp2-sp3 Hybrid crystalline boron nitride and its preparation process

Patent metadata

Field	Value
Publication number	US-11708268-B2
Application number	US-202017039194-A
Country	US
Kind code	B2
Filing date	Sep 30, 2020
Priority date	Apr 17, 2020
Publication date	Jul 25, 2023
Grant date	Jul 25, 2023

Abstract

The present disclosure relates to a novel sp 2 -sp 3 hybrid crystalline boron nitride and its preparation process. A novel sp 2 -sp 3 hybrid crystalline boron nitride allotrope, named Gradia BN, is synthesized using sp 2 or sp 3 hybridized boron nitride as raw materials under high-temperature and high-pressure. The basic structural units of Gradia BN are composed of sp 2 hybridized graphite-like structural units and sp 3 hybridized diamond-like structural units. Gradia BN disclosed in the present disclosure is a class of new sp 2 -sp 3 hybrid boron nitride allotrope, whose crystal structure can vary with the widths and/or crystallographic orientation relationships of internal sp 2 and/or sp 3 structural units, and may have variable physical properties.

First claim

The invention claimed is:

1. An sp 2 -sp 3 hybrid crystalline boron nitride, wherein its basic structural unit is composed of sp 2 hybridized graphite-like structural unit and sp 3 hybridized diamond-like structural unit, and wherein the sp2 hybridized graphite-like structural unit and the sp3 hybridized diamond-like structural unit are connected via a coherent interface.

2. The sp 2 -sp 3 hybrid crystalline boron nitride according to claim 1 , being a monocrystal with a space group of 4 (P2 1 ) or 6 (Pm) or 8 (Cm) or a polycrystal composed of two or more different phases, each of which phases having a space group of 4 (P2 1 ) or 6 (Pm) or 8 (Cm).

3. A process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride as defined in claim 1 , comprising the steps of:
(1) loading the boron nitride raw material into a pre-pressing mold, pre-forming the boron nitride raw material into a body by using a press, and then placing it in a vacuum hot-pressing sintering furnace for pre-sintering;
(2) putting the pre-sintered boron nitride raw material body as obtained in step (1) into an assembly block, and then drying the assembly block containing the pre-sintered boron nitride raw material body;
(3) placing the assembly block as obtained in step (2) in a press and subjecting it to high-temperature and high-pressure treatment; and
(4) taking out the assembly block from the press to obtain the sp 2 -sp 3 hybrid crystalline boron nitride after a pressure relief and cooling.

4. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 3 , wherein step (1) further comprises purifying the boron nitride raw material by an acid solution to remove impurities, cleaning it using methanol and then drying it before it is loaded into the pre-pressing mold.

5. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 4 , wherein the high-temperature and high-pressure treatment of step (3) is carried out at a pressure of 3-25 GPa and a temperature of 600-2500° C. for a period of 5-120 minutes.

6. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 5 , wherein the boron nitride raw material is one or more sp 2 hybridized boron nitride materials selected from the group consisting of hexagonal boron nitride (hBN), rhombohedral boron nitride (rBN), disordered boron nitride (pBN and tBN), graphene-like boron nitride (BN monolayer or nanomesh), boron nitride nanotubes (BN nanotubes), onion boron nitride (oBN) and amorphous boron nitride (aBN), one or more sp 3 hybridized boron nitride materials selected from the group consisting of sphalerite boron nitride (cBN) and wurtzite boron nitride (wBN), or a mixture of sp 2 hybridized boron nitride materials and sp 3 hybridized boron nitride materials.

7. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 4 , wherein the boron nitride raw material is one or more sp 2 hybridized boron nitride materials selected from the group consisting of hexagonal boron nitride (hBN), rhombohedral boron nitride (rBN), disordered boron nitride (pBN and tBN), graphene-like boron nitride (BN monolayer or nanomesh), boron nitride nanotubes (BN nanotubes), onion boron nitride (oBN) and amorphous boron nitride (aBN), one or more sp 3 hybridized boron nitride materials selected from the group consisting of sphalerite boron nitride (cBN) and wurtzite boron nitride (wBN), or a mixture of sp 2 hybridized boron nitride materials and sp 3 hybridized boron nitride materials.

8. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 3 , wherein the pre-sintering step of step (1) is carried out at a temperature of 200-1800° C. for a period of 5-60 minutes.

9. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 3 , wherein the drying step of step (2) is carried out at a temperature of 100-200° C. for 1-3 h.

10. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 3 , wherein the high-temperature and high-pressure treatment is carried out at a pressure of 3-25 GPa and a temperature of 600-2500° C. for a period of 5-120 minutes.

11. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 10 , wherein the boron nitride raw material is one or more sp 2 hybridized boron nitride materials selected from the group consisting of hexagonal boron nitride (hBN), rhombohedral boron nitride (rBN), disordered boron nitride (pBN and tBN), graphene-like boron nitride (BN monolayer or nanomesh), boron nitride nanotubes (BN nanotubes), onion boron nitride (oBN) and amorphous boron nitride (aBN), one or more sp 3 hybridized boron nitride materials selected from the group consisting of sphalerite boron nitride (cBN) and wurtzite boron nitride (wBN), or a mixture of sp 2 hybridized boron nitride materials and sp 3 hybridized boron nitride materials.

12. The process for the preparation of the sp 2 -sp 3 hybrid crystalline boron nitride according to claim 3 , wherein the boron nitride raw material is one or more sp 2 hybridized boron nitride materials selected from the group consisting of hexagonal boron nitride (hBN), rhombohedral boron nitride (rBN), disordered boron nitride (pBN and tBN), graphene-like boron nitride (BN monolayer or nanomesh), boron nitride nanotubes (BN nanotubes), onion boron nitride (oBN) and amorphous boron nitride (aBN), one or more sp 3 hybridized boron nitride materials selected from the group consisting of sphalerite boron nitride (cBN) and wurtzite boron nitride (wBN), or a mixture of sp 2 hybridized boron nitride materials and sp 3 hybridized boron nitride materials.

Assignees

• Univ Yanshan

Inventors

• Zhao Zhisheng
• Luo Kun
• Sun Lei
• Liu Bing
• Hu Wentao
• He Julong
• Yu Dongli
• Tian Yongjun
• Xu Bo
• Liu Zhongyuan

Classifications

• C01B21/0648 Primary

  After-treatment, e.g. grinding, purification (transformation of hexagonal into cubic or wurtzitic boron nitride C04B35/5831) · CPC title

• C01P2002/01

  depicted by a TEM-image · CPC title

• C01P2002/76

  by a space-group or by other symmetry indications · CPC title

• C01P2002/77

  by unit-cell parameters, atom positions or structure diagrams · CPC title

• C04B35/645 Primary

  Pressure sintering · CPC title