Systems and methods for porous wall coatings
US-2026075939-A1 · Mar 12, 2026 · US
of semiconducting materials
of semiconducting materials · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C25D11/32 |
| Official title | of semiconducting materials |
| Display label | of semiconducting materials |
| Total patents | 59 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 12 |
| 2016 | 6 |
| 2017 | 6 |
| 2018 | 2 |
| 2019 | 5 |
| 2020 | 7 |
| 2021 | 3 |
| 2022 | 6 |
| 2023 | 2 |
| 2024 | 4 |
| 2025 | 3 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Systems and methods for stress reduction in porous layers
US-2026076113-A1 · Mar 12, 2026 · US
Method of manufacturing semiconductor chips having a side wall sealing
US-12525499-B2 · Jan 13, 2026 · US
Silicon carbide single crystal substrate processing method, and silicon carbide single crystal substrate processing system
US-2025382724-A1 · Dec 18, 2025 · US
Silicon carbide substrate or substrate processing method
US-12501676-B2 · Dec 16, 2025 · US
Processing method for silicon carbide single crystal substrate, silicon carbide single crystal substrate processing system, and replenishing liquid
US-2025369155-A1 · Dec 4, 2025 · US
Surface processing method of semiconductor wafer
US-2024371629-A1 · Nov 7, 2024 · US
Anodization apparatus
US-2024318344-A1 · Sep 26, 2024 · US
Substrate processing apparatus and method for manufacturing semiconductor device
US-2024312800-A1 · Sep 19, 2024 · US
Silicon carbide substrate or substrate processing method
US-2024055487-A1 · Feb 15, 2024 · US
Methods for fabricating and etching porous silicon carbide structures
US-11732377-B2 · Aug 22, 2023 · US
Device comprising an anodic porous region surrounded by a trench having an electrical isolation barrier, and corresponding method
US-2023197440-A1 · Jun 22, 2023 · US
Conformal yttrium oxide coating
US-2022403531-A1 · Dec 22, 2022 · US
SURFACE PROCESSING METHOD FOR SiC SUBSTRATE
US-2022380927-A1 · Dec 1, 2022 · US
Method of Manufacturing Semiconductor Chips having a Side Wall Sealing
US-2022352048-A1 · Nov 3, 2022 · US
Anodization apparatus and anodization method
US-2022251722-A1 · Aug 11, 2022 · US
Methods for fabricating and etching porous silicon carbide structures
US-2022178043-A1 · Jun 9, 2022 · US
Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment
US-11248306-B2 · Feb 15, 2022 · US
Anodization apparatus
US-2021292928-A1 · Sep 23, 2021 · US
Methods for fabricating and etching porous silicon carbide structures
US-11124889-B2 · Sep 21, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C25D11/32?
- CPC C25D11/32 is the Cooperative Patent Classification code for “of semiconducting materials.”
- How many patents are filed under CPC C25D11/32 (of semiconducting materials)?
- Our database includes 59 publications tagged with this CPC code.
- Is patent activity under CPC C25D11/32 growing?
- Publication counts under this code: 4 in 2024 vs 3 in 2025 (latest complete years).