Semiconductor surface smoothing and semiconductor arrangement
US-2020365385-A1 · Nov 19, 2020 · US
Silicon carbide substrate or substrate processing method
US12501676B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12501676-B2 |
| Application number | US-202217975646-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 28, 2022 |
| Priority date | Aug 12, 2022 |
| Publication date | Dec 16, 2025 |
| Grant date | Dec 16, 2025 |
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- Title
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Abstract
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A substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing a anodization reaction on the predetermined reaction part by an electrochemical method to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface.
First claim
Opening claim text (preview).
What is claimed is: 1 . A substrate processing method, comprising: providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing an anodization reaction on the predetermined reaction part to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface, wherein the weakened layer is removed by a quenching method. 2 . The substrate processing method according to claim 1 , wherein a material of the substrate is silicon carbide. 3 . The substrate processing method according to claim 1 , wherein the thickness of the weakened layer is controlled by an amount of input charges in anodization. 4 . The substrate processing method according to claim 1 , wherein the predetermined reaction part contacts an electrolyte solution during the anodization, and the electrolyte solution comprises fluorine ions. 5 . The substrate processing method according to claim 4 , wherein the electrolytic solution is a hydrofluoric acid solution. 6 . The substrate processing method according to claim 1 , further comprising performing a surface treatment on the exposed surface. 7 . The substrate processing method according to claim 6 , wherein the surface treatment is chemical mechanical polishing. 8 . The substrate processing method according to claim 1 , wherein the weakened layer is porous. 9 . The substrate processing method according to claim 1 , wherein the weakened layer is lamellar. 10 . A substrate processing method, comprising: providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing an anodization reaction on the predetermined reaction part to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface, wherein the weakened layer is removed by an airflow cutting method. 11 . The substrate processing method according to claim 10 , wherein a material of the substrate is silicon carbide. 12 . The substrate processing method according to claim 10 , wherein the thickness of the weakened layer is controlled by an amount of input charges in anodization. 13 . The substrate processing method according to claim 10 , wherein the predetermined reaction part contacts an electrolyte solution during the anodization, and the electrolyte solution comprises fluorine ions. 14 . The substrate processing method according to claim 13 , wherein the electrolytic solution is a hydrofluoric acid solution. 15 . The substrate processing method according to claim 10 , further comprising performing a surface treatment on the exposed surface. 16 . The substrate processing method according to claim 15 , wherein the surface treatment is chemical mechanical polishing. 17 . The substrate processing method according to claim 10 , wherein the weakened layer is porous. 18 . The substrate processing method according to claim 10 , wherein the weakened layer is lamellar.
Assignees
Inventors
Classifications
of conductive or resistive materials · CPC title
of semiconductor materials · CPC title
- H10P52/00Primary
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Etching of wafers, substrates or parts of devices · CPC title
Silicon carbide · CPC title
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- What does patent US12501676B2 cover?
- A substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing a anodization re…
- Who is the assignee on this patent?
- Univ Nat Central
- What technology area does this patent fall under?
- Primary CPC classification H10P52/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 16 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).